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- ItemModelling and Experimental Investigation of Hexagonal Nacre-Like Structure Stiffness(Basel : MDPI, 2020) Rouhana, Rami; Stommel, MarkusA highly ordered, hexagonal, nacre-like composite stiffness is investigated using experiments, simulations, and analytical models. Polystyrene and polyurethane are selected as materials for the manufactured specimens using laser cutting and hand lamination. A simulation geometry is made by digital microscope measurements of the specimens, and a simulation is conducted using material data based on component material characterization. Available analytical models are compared to the experimental results, and a more accurate model is derived specifically for highly ordered hexagonal tablets with relatively large in-plane gaps. The influence of hexagonal width, cut width, and interface thickness are analyzed using the hexagonal nacre-like composite stiffness model. The proposed analytical model converges within 1% with the simulation and experimental results
- ItemX-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor(Washington, DC : American Chemical Society, 2011) Hrauda, N.; Zhang, J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C.; Nanver, L.K.; Moers, J.; Grützmacher, D.; Bauer, G.For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.