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- ItemIron-assisted ion beam patterning of Si(001) in the crystalline regime(Bristol : IOP, 2012) Macko, S.; Grenzer, J.; Frost, F.; Engler, M.; Hirsch, D.; Fritzsche, M.; Mücklich, A.; Michely, T.We present ion beam erosion experiments on Si(001) with simultaneous sputter co-deposition of steel at 660 K. At this temperature, the sample remains within the crystalline regime during ion exposure and pattern formation takes place by phase separation of Si and iron-silicide. After an ion fluence of F ≈ 5.9×10 21 ions m -2, investigations by atomic force microscopy and scanning electron microscopy identify sponge, segmented wall and pillar patterns with high aspect ratios and heights of up to 200 nm. Grazing incidence x-ray diffraction and transmission electron microscopy reveal the structures to be composed of polycrystalline iron-silicide. The observed pattern formation is compared to that in the range of 140-440K under otherwise identical conditions, where a thin amorphous layer forms due to ion bombardment.
- ItemStep-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting(Melville, NY : AIP Publ., 2019) Schewski, R.; Lion, K.; Fiedler, A.; Wouters, C.; Popp, K.; Levchenko, S.V.; Schulz, T.; Schmidbauer, M.; Bin Anooz, S.; Grüneberg, R.; Galazka, Z.; Wagner, G.; Irmscher, K.; Scheffler, M.; Draxl, C.; Albrecht, M.We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2O3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (100) substrates with 6° miscut toward the [001⎯⎯] direction show high electron mobilities of about 90 cm2 V−1 s−1 at electron concentrations in the range of 1–2 × 1018 cm−3, while layers grown under identical conditions but with 6° miscut toward the [001] direction exhibit low electron mobilities of around 10 cm2 V−1 s−1. By using high-resolution scanning transmission electron microscopy and atomic force microscopy, we find significant differences in the surface morphologies of the substrates after annealing and of the layers in dependence on their miscut direction. While substrates with miscuts toward [001⎯⎯] exhibit monolayer steps terminated by (2⎯⎯01) facets, mainly bilayer steps are found for miscuts toward [001]. Epitaxial growth on both substrates occurs in step-flow mode. However, while layers on substrates with a miscut toward [001⎯⎯] are free of structural defects, those on substrates with a miscut toward [001] are completely twinned with respect to the substrate and show stacking mismatch boundaries. This twinning is promoted at step edges by transformation of the (001)-B facets into (2⎯⎯01) facets. Density functional theory calculations of stoichiometric low index surfaces show that the (2⎯⎯01) facet has the lowest surface energy following the (100) surface. We conclude that facet transformation at the step edges is driven by surface energy minimization for the two kinds of crystallographically inequivalent miscut orientations in the monoclinic lattice of β-Ga2O3.
- ItemStructure of Ni(OH)2 intermediates determines the efficiency of NiO-based photocathodes – a case study using novel mesoporous NiO nanostars(Cambridge : RSC, 2019) Wahyuono, Ruri Agung; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Ignaszak, Anna; Seyring, Martin; Rettenmayr, Markus; Fize, Jennifer; Artero, Vincent; Chavarot-Kerlidou, Murielle; Dietzek, BenjaminWe report the wet chemical synthesis of mesoporous NiO nanostars (NS) as photocathode material for dye-sensitized solar cells (DSSCs). The growth mechanism of NiO NS as a new morphology of NiO is assessed by TEM and spectroscopic investigations. The NiO NS are obtained upon annealing of preformed β-Ni(OH)2 into pristine NiO with low defect concentrations and favorable electronic configuration for dye sensitization. The NiO NS consist of fibers self-assembled from nanoparticles yielding a specific surface area of 44.9 m2 g-1. They possess a band gap of 3.83 eV and can be sensitized by molecular photosensitizers bearing a range of anchoring groups, e.g. carboxylic acid, phosphonic acid, and pyridine. The performance of NiO NS-based photocathodes in photoelectrochemical application is compared to that of other NiO morphologies, i.e. nanoparticles and nanoflakes, under identical conditions. Sensitization of NiO NS with the benchmark organic dye P1 leads to p-DSSCs with a high photocurrent up to 3.91 mA cm-2 whilst the photoelectrochemical activity of the NiO NS photocathode in aqueous medium in the presence of an irreversible electron acceptor is reflected by generation of a photocurrent up to 23 μA cm-2 © 2019 The Royal Society of Chemistry.