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- ItemEfficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Radziunas, Mindaugas; Fuhrmann, Jürgen; Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Koprucki, Thomas; Brée, Carsten; Wenzel, Hans; Bandelow, UweIn this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.
- ItemSemiconductor laser linewidth theory revisited(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2021) Wenzel, Hans; Kantner, Markus; Radziunas, Mindaugas; Bandelow, UweMore and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective Alpha-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.
- ItemNumerical methods for generalized nonlinear Schrödinger equations(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Čiegis, Raimondas; Amiranashili, Shalva; Radziunas, MindaugasWe present and analyze different splitting algorithms for numerical solution of the both classical and generalized nonlinear Schrödinger equations describing propagation of wave packets with special emphasis on applications to nonlinear fiber-optics. The considered generalizations take into account the higher-order corrections of the linear differential dispersion operator as well as the saturation of nonlinearity and the self-steepening of the field envelope function. For stabilization of the pseudo-spectral splitting schemes for generalized Schrödinger equations a regularization based on the approximation of the derivatives by the low number of Fourier modes is proposed. To illustrate the theoretically predicted performance of these schemes several numerical experiments have been done.
- ItemNumerical algorithms for Schrödinger equation with artificial boundary conditions(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2009) Čiegis, Raimondas; Laukaitytė, Inga; Radziunas, MindaugasWe consider a one-dimensional linear Schrödinger problem defined on an infinite domain and approximated by the Crank-Nicolson type finite difference scheme. To solve this problem numerically we restrict the computational domain by introducing the reflective, absorbing or transparent artificial boundary conditions. We investigate the conservativity of the discrete scheme with respect to the mass and energy of the solution. Results of computational experiments are presented and the efficiency of different artificial boundary conditions is discussed.
- ItemMode competition in broad-ridge-waveguide lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Köster, Jan-Philipp; Putz, Alexander; Wenzel, Hans; Wünsche, Hans-Jürgen; Radziunas, Mindaugas; Stephan, Holger; Wilkens, Martin; Zeghuzi, Anissa; Knigge, AndreaThe lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study of the lateral-mode competition two complementary simulation tools are applied, representing different classes of approximations. The first tool bases on a completely incoherent superposition of mode intensities and disregards longitudinal effects like spatial hole burning, whereas the second tool relies on a simplified carrier transport and current flow. Both tools yield agreeing power-current characteristics that fit the data measured for 5 to 23 µm wide ridges. Also, a similarly good qualitative conformance of the near and far fields is found. However, the threshold of individual modes, the partition of power between them at a given current, and details of the near and far fields show differences. These differences are the consequence of a high sensitivity of the mode competition to details of the models and of the device structure. Nevertheless, it can be concluded concordantly that the brightness rises with increasing ridge width irrespective of the onset of more and more lateral modes. The lateral brightness 2W · mm¯¹ 1mrad¯¹ at 10MW · cm¯²2 power density on the front facet of the investigated laser with widest ridge (23 µm) is comparable with best values known from much wider broad-area lasers. In addition, we show that one of the simulation tools is able to predict beam steering and coherent beam.
- ItemModeling and efficient simulations of broad-area edge-emitting semiconductor lasers and amplifiers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Radziunas, MindaugasWe present a (2+1)-dimensional partial differential equation model for spatial-lateral dynamics of edge-emitting broad-area semiconductor devices and several extensions of this model describing different physical effects. MPI-based parallelization of the resulting middlesize numerical problem is implemented and tested on the blade cluster and separate multi-core computers at the Weierstrass Institute in Berlin. It was found, that an application of 25-30 parallel processes on all considered platforms was guaranteeing a nearly optimal performance of the algorithm with the speedup around 20-25 and the efficiency of 0.7-0.8. It was also shown, that a simultaneous usage of several in-house available multi-core computers allows a further increase of the speedup without a significant loss of the efficiency. Finally, an importance of the considered problem and the efficient numerical simulations of this problem were illustrated by a few examples occurring in real world applications.
- ItemBeam combining scheme for high-power broad-area semiconductor lasers with Lyot-filtered reinjection: Modeling, simulations, and experiments(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Brée, Carsten; Raab, Volker; Montiel-Ponsoda, Joan; Garre-Werner, Guillermo; Staliunas, Kestutis; Bandelow, Uwe; Radziunas, MindaugasA brightness- and power-scalable polarization beam combining scheme for high-power, broadarea semiconductor laser diodes is investigated numerically and experimentally. To achieve the beam combining, we employ Lyot-filtered optical reinjection from an external cavity, which forces lasing of the individual diodes on interleaved frequency combs with overlapping envelopes and enables a high optical coupling efficiency. Unlike conventional spectral beam combining schemes with diffraction gratings, the optical coupling efficiency is insensitive to thermal drifts of laser wavelengths. This scheme can be used for efficient coupling of a large number of laser diodes and paves the way towards using broad-area laser diode arrays for cost-efficient material processing, which requires high-brilliance emission and optical powers in the kW-regime.
- ItemStrong asymmetry of mode-locking pulses in quantum-dot semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, Andrei G.; Viktorov, Evgeny A.; Fiol, Gerrit; Schmeckebier, Holger; Birnmberg, DieterWe describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by experimental data.
- ItemExternal cavity modes in Lang-Kobayashi and traveling wave models(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2006) Radziunas, Mindaugas; Wünsche, Hans-Jürgen; Krauskopf, Bernd; Wolfrum, MatthiasWe investigate a semiconductor laser with delayed optical feedback due to an external cavity formed by a regular mirror. We discuss similarities and differences of the well-known Lang--Kobayashi delay differential equation model and the traveling wave partial differential equation model. For comparison we locate the continuous wave states in both models and analyze their stability.
- ItemTraveling wave modeling of dynamics in semiconductor ring lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Radziunas, MindaugasWe use the traveling wave model for simulating and analyzing nonlinear dynamics of complex semiconductor ring laser devices. This modeling allows to consider temporal-spatial distributions of the counter-propagating slowly varying optical fields and the carriers, what can be important when studying non-homogeneous ring cavities, propagation of short pulses or fast switching. By performing numerical integration of the model equations we observe several dynamic regimes as well as transitions between them. The computation of ring cavity modes explains some peculiarities of these regimes.