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Version: publishedVersion × Subject: optical mode ×

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Now showing 1 - 4 of 4
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    Longitudinal modes of multisection ring and edge-emitting semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Radziunas, Mindaugas
    We use the traveling wave model for simulating and analyzing nonlinear dynamics of multisection ring and edge-emitting semiconductor laser devices. We introduce the concept of instantaneous longitudinal optical modes and present an algorithm for their computation. A semiconductor ring laser was considered to illustrate the advantages of the mode analysis.
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    Numerical cooling strategy design for hot rolled dual phase steel
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Suwanpinij, Piyada; Togobytska, Nataliya; Prahl, Ulrich; Weiss, Wolf; Hömberg, Dietmar; Bleck, Wolfgang
    In this article, the Mo-Mn dual phase steel and its process parameters in hot rolling are discussed. The process window was derived by combining the experimental work in a hot deformation dilatometer and numerical calculation of process parameters using rate law models for ferrite and martensite transformation. The ferrite formation model is based on the Leblond and Devaux approach while martensite formation is based on the Koistinen-Marburger (K-M) formula. The carbon enrichment during ferrite formation is taken into account for the following martensite formation. After the completion of the parameter identification for the rate law model, the evolution of phases in multiphase steel can be addressed. Particularly, the simulations allow for predicting the preferable degree of retained strain and holding temperature on the run out table (ROT) for the required ferrite fraction.
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    Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, A.G.; Viktorov, E.A.
    We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.
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    Strong asymmetry of mode-locking pulses in quantum-dot semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, Andrei G.; Viktorov, Evgeny A.; Fiol, Gerrit; Schmeckebier, Holger; Birnmberg, Dieter
    We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by experimental data.