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- ItemTopography evolution of germanium thin films synthesized by pulsed laser deposition(New York, NY : American Inst. of Physics, 2017) Schumacher, P.; Mayr, S.G.; Rauschenbach, B.Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.
- ItemConfined crystals of the smallest phase-change material(Washington, DC : American Chemical Society, 2013) Giusca, C.E.; Stolojan, V.; Sloan, J.; Börrnert, F.; Shiozawa, H.; Sader, K.; Rümmeli, M.H.; Büchner, B.; Silva, S.R.P.The demand for high-density memory in tandem with limitations imposed by the minimum feature size of current storage devices has created a need for new materials that can store information in smaller volumes than currently possible. Successfully employed in commercial optical data storage products, phase-change materials, that can reversibly and rapidly change from an amorphous phase to a crystalline phase when subject to heating or cooling have been identified for the development of the next generation electronic memories. There are limitations to the miniaturization of these devices due to current synthesis and theoretical considerations that place a lower limit of 2 nm on the minimum bit size, below which the material does not transform in the structural phase. We show here that by using carbon nanotubes of less than 2 nm diameter as templates phase-change nanowires confined to their smallest conceivable scale are obtained. Contrary to previous experimental evidence and theoretical expectations, the nanowires are found to crystallize at this scale and display amorphous-to-crystalline phase changes, fulfilling an important prerequisite of a memory element. We show evidence for the smallest phase-change material, extending thus the size limit to explore phase-change memory devices at extreme scales.
- ItemAnodically fabricated TiO2–SnO2 nanotubes and their application in lithium ion batteries(Cambridge : Royal Society of Chemistry, 2016) Madian, M.; Klose, M.; Jaumann, T.; Gebert, A.; Oswald, S.; Ismail, N.; Eychmüller, A.; Eckerta, J.; Giebeler, L.Developing novel electrode materials is a substantial issue to improve the performance of lithium ion batteries. In the present study, single phase Ti–Sn alloys with different Sn contents of 1 to 10 at% were used to fabricate Ti–Sn–O nanotubes via a straight-forward anodic oxidation step in an ethylene glycolbased solution containing NH4F. Various characterization tools such as SEM, EDXS, TEM, XPS and Raman spectroscopy were used to characterize the grown nanotube films. Our results reveal the successful formation of mixed TiO2/SnO2 nanotubes in the applied voltage range of 10–40 V. The as-formed nanotubes are amorphous and their dimensions are precisely controlled by tuning the formation voltage which turns Ti–Sn–O nanotubes into highly attractive materials for various applications. As an example, the Ti–Sn–O nanotubes offer promising properties as anode materials in lithium ion batteries. The electrochemical performance of the grown nanotubes was evaluated against a Li/Li+ electrode at a current density of 504 mA cm2. The results demonstrate that TiO2/SnO2 nanotubes prepared at 40 V on a TiSn1 alloy substrate display an average 1.4 fold increase in areal capacity with excellent cycling stability over more than 400 cycles compared to the pure TiO2 nanotubes fabricated and tested under identical conditions. This electrode was tested at current densities of 50, 100, 252, 504 and 1008 mA cm2 exhibiting average capacities of 780, 660, 490, and 405 mA cm2 (i.e. 410, 345, 305 and 212 mA h g1), respectively. The remarkably improved electrochemical performance is attributed to enhanced lithium ion diffusion which originates from the presence of SnO2 nanotubes and the high surface area of the mixed oxide tubes. The TiO2/SnO2 electrodes retain their original tubular structure after electrochemical cycling with only slight changes in their morphology.
- ItemIron-assisted ion beam patterning of Si(001) in the crystalline regime(Bristol : IOP, 2012) Macko, S.; Grenzer, J.; Frost, F.; Engler, M.; Hirsch, D.; Fritzsche, M.; Mücklich, A.; Michely, T.We present ion beam erosion experiments on Si(001) with simultaneous sputter co-deposition of steel at 660 K. At this temperature, the sample remains within the crystalline regime during ion exposure and pattern formation takes place by phase separation of Si and iron-silicide. After an ion fluence of F ≈ 5.9×10 21 ions m -2, investigations by atomic force microscopy and scanning electron microscopy identify sponge, segmented wall and pillar patterns with high aspect ratios and heights of up to 200 nm. Grazing incidence x-ray diffraction and transmission electron microscopy reveal the structures to be composed of polycrystalline iron-silicide. The observed pattern formation is compared to that in the range of 140-440K under otherwise identical conditions, where a thin amorphous layer forms due to ion bombardment.