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Modelling and Experimental Investigation of Hexagonal Nacre-Like Structure Stiffness
2020, Rouhana, Rami, Stommel, Markus
A highly ordered, hexagonal, nacre-like composite stiffness is investigated using experiments, simulations, and analytical models. Polystyrene and polyurethane are selected as materials for the manufactured specimens using laser cutting and hand lamination. A simulation geometry is made by digital microscope measurements of the specimens, and a simulation is conducted using material data based on component material characterization. Available analytical models are compared to the experimental results, and a more accurate model is derived specifically for highly ordered hexagonal tablets with relatively large in-plane gaps. The influence of hexagonal width, cut width, and interface thickness are analyzed using the hexagonal nacre-like composite stiffness model. The proposed analytical model converges within 1% with the simulation and experimental results
X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
2011, Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., Carbone, D., Holý, V., Jovanović, V., Biasotto, C., Nanver, L.K., Moers, J., Grützmacher, D., Bauer, G.
For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.