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- ItemLarge superplastic strain in non-modulated epitaxial Ni-Mn-Ga films(Amsterdam : Elsevier, 2010) Yeduru, S.R.; Backen, A.; Fahler, S.; Schultz, L.; Kohl, M.The phase transformation and superplastic characteristics of free-standing epitaxial Ni-Mn-Ga stripes are reported. The stripes are prepared by micromachining a 1 μm thick Ni-Mn-Ga film sputter-deposited on a single crystalline MgO (100) substrate using optical lithography and a Chromium-based sacrificial layer technology. The stripes are oriented at angles of 0 and 45 degrees with respect to the Ni-Mn-Ga unit cell. Electrical resistance versus temperature characteristics reveal a reversible thermally induced phase transformation between 169°C and 191°C. Stress-strain measurements are performed with the stress applied along the [100]Ni-Mn-Ga as well as [110]Ni-Mn-Ga direction. Depending on the orientation, the twinning stress ranges between 25 and 30 MPa, respectively. For the [100] Ni-Mn-Ga and [110]Ni-Mn-Ga directions, superplastic behaviour with a strain plateau of 12 % and 4% are observed, respectively, indicating stress-induced reorientation of non-modulated martensite variants.
- ItemTowards deterministically controlled InGaAs/GaAs lateral quantum dot molecules(College Park, MD : Institute of Physics Publishing, 2008) Wang, L.; Rastelli, A.; Kiravittaya, S.; Atkinson, P.; Ding, F.; Bof Bufon, C.C.; Hermannstädter, C.; Witzany, M.; Beirne, G.J.; Michler, P.; Schmidt, O.G.We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro- photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
- ItemMagnetically induced reorientation of martensite variants in constrained epitaxial Ni-Mn-Ga films grown on MgO(001)(Milton Park : Taylor & Francis, 2008) Thomas, M.; Heczko, O.; Buschbeck, J.; Rößler, U.K.; McCord, J.; Scheerbaum, N.; Schultz, L.; Fähler, S.Magnetically induced reorientation (MIR) is observed in epitaxial orthorhombic Ni-Mn-Ga films. Ni-Mn-Ga films have been grown epitaxially on heated MgO(001) substrates in the cubic austenite state. The unit cell is rotated by 45° relative to the MgO cell. The growth, structure texture and anisotropic magnetic properties of these films are described. The crystallographic analysis of the martensitic transition reveals variant selection dominated by the substrate constraint. The austenite state has low magnetocrystalline anisotropy. In the martensitic state, the magnetization curves reveal an orthorhombic symmetry having three magnetically non-equivalent axes. The existence of MIR is deduced from the typical hysteresis within the first quadrant in magnetization curves and independently by texture measurement without and in the presence of a magnetic field probing micro structural changes. An analytical model is presented, which describes MIR in films with constrained overall extension by the additional degree of freedom of an orthorhombic structure compared to the tetragonal structure used in the standard model.
- ItemThickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal Co2MnGa thin films(College Park, MD : American Physical Society, 2020) Park, G.-H.; Reichlova, H.; Schlitz, R.; Lammel, M.; Markou, A.; Swekis, P.; Ritzinger, P.; Kriegner, D.; Noky, J.; Gayles, J.; Sun, Y.; Felser, C.; Nielsch, K.; Goennenwein, S.T.B.; Thomas, A.We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 μV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magnetothermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magnetothermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.
- ItemTransformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes(Cambridge : Royal Society of Chemistry, 2016) Müller, C.; Neckel, I.; Monecke, M.; Dzhagan, V.; Salvan, G.; Schulze, S.; Baunack, S.; Gemming, T.; Oswald, S.; Engemaiere, V.; Mosca, D.H.We report the fabrication of Ni2.7Mn0.9Ga0.4/InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c/a = 2.03 (film) and c/a = 2.01 (tube) is identified for the Ni2.7Mn0.9Ga0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found.