Search Results
Photoluminescence at room temperature of liquid-phase crystallized silicon on glass
The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.
Formation of intermittent covalent bonds at high contact pressure limits superlow friction on epitaxial graphene
Epitaxial graphene on SiC(0001) exhibits superlow friction due to its weak out-of-plane interactions. Friction-force microscopy with silicon tips shows an abrupt increase of friction by one order of magnitude above a threshold normal force. Density-functional tight-binding simulations suggest that this wearless high-friction regime involves an intermittent sp3 rehybridization of graphene at contact pressure exceeding 10 GPa. The simultaneous formation of covalent bonds with the tip's silica surface and the underlying SiC interface layer establishes a third mechanism limiting the superlow friction on epitaxial graphene, in addition to dissipation in elastic instabilities and in wear processes.
Pattern formation on Ge by low energy ion beam erosion
Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes and is one of the most important fields of nanotechnology. In this report a comprehensive study of surface smoothing and self-organized pattern formation on Ge(100) by using different noble gases ion beam erosion is presented. The investigations focus on low ion energies ( 2000 eV) and include the entire range of ion incidence angles. It is found that for ions (Ne, Ar) with masses lower than the mass of the Ge target atoms, no pattern formation occurs and surface smoothing is observed for all angles of ion incidence. In contrast, for erosion with higher mass ions (Kr, Xe), ripple formation starts at incidence angles of about 65° depending on ion energy. At smaller incident angles surface smoothing occurs again. Investigations of the surface dynamics for specific ion incidence angles by changing the ion fluence over two orders of magnitude gives a clear evidence for coarsening and faceting of the surface pattern. Both observations indicate that gradient-dependent sputtering and reflection of primary ions play crucial role in the pattern evolution, just at the lowest accessible fluences. The results are discussed in relation to recently proposed redistributive or stress-induced models for pattern formation. In addition, it is argued that a large angular variation of the sputter yield and reflected primary ions can significantly contribute to pattern formation and evolution as nonlinear and non-local processes as supported by simulation of sputtering and ion reflection.
Ultracompact three-dimensional tubular conductivity microsensors for ionic and biosensing applications
We present ultracompact three-dimensional tubular structures integrating Au-based electrodes as impedimetric microsensors for the in-flow determination of mono- and divalent ionic species and HeLa cells. The microsensors show an improved performance of 2 orders of magnitude (limit of detection = 0.1 nM for KCl) compared to conventional planar conductivity detection systems integrated in microfluidic platforms and the capability to detect single HeLa cells in flowing phosphate buffered saline. These highly integrated conductivity tubular sensors thus open new possibilities for lab-in-a-tube devices for bioapplications such as biosensing and bioelectronics.
On the electronic properties of a single dislocation
A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm2, the current density through a single dislocation is J = 3.8 × 1012 A/cm2 corresponding to a resistivity of ρ ≅ 1 × 10-8 Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.
Orders of magnitude loss reduction in photonic bandgap fibers by engineering the core surround
We demonstrate how to reduce the loss in photonic bandgap fibers by orders of magnitude by varying the radius of the corner strands in the core surround. As a fundamental working principle we find that changing the corner strand radius can lead to backscattering of light into the fiber core. Selecting an optimal corner strand radius can thus reduce the loss of the fundamental core mode in a specific wavelength range by almost two orders of magnitude when compared to an unmodified cladding structure. Using the optimal corner radius for each transmission window, we observe the low-loss behavior for the first and second bandgaps, with the losses in the second bandgap being even lower than that of the first one. Our approach of reducing the confinement loss is conceptually applicable to all kinds of photonic bandgap fibers including hollow core and all-glass fibers as well as on-chip light cages. Therefore, our concept paves the way to low-loss light guidance in such systems with substantially reduced fabrication complexity.
Nanoplasmonic electron acceleration in silver clusters studied by angular-resolved electron spectroscopy
The nanoplasmonic field enhancement effects in the energetic electron emission from few-nm-sized silver clusters exposed to intense femtosecond dual pulses are investigated by high-resolution double differential electron spectroscopy. For moderate laser intensities of 10 14Wcm -2, the delaydependent and angular-resolved electron spectra show laser-aligned emission of electrons up to keV kinetic energies, exceeding the ponderomotive potential by two orders of magnitude. The importance of the nanoplasmonic field enhancement due to resonant Mie-plasmon excitation observed for optimal pulse delays is investigated by a direct comparison with molecular dynamics results. The excellent agreement of the key signatures in the delay-dependent and angular-resolved spectra with simulation results allows for a quantitative analysis of the laser and plasmonic contributions to the acceleration process. The extracted field enhancement at resonance verifies the dominance of surfaceplasmon-assisted re-scattering.