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Phonon-Assisted Two-Photon Interference from Remote Quantum Emitters
Photonic quantum technologies are on the verge of finding applications in everyday life with quantum cryptography and quantum simulators on the horizon. Extensive research has been carried out to identify suitable quantum emitters and single epitaxial quantum dots have emerged as near-optimal sources of bright, on-demand, highly indistinguishable single photons and entangled photon-pairs. In order to build up quantum networks, it is essential to interface remote quantum emitters. However, this is still an outstanding challenge, as the quantum states of dissimilar “artificial atoms” have to be prepared on-demand with high fidelity and the generated photons have to be made indistinguishable in all possible degrees of freedom. Here, we overcome this major obstacle and show an unprecedented two-photon interference (visibility of 51 ± 5%) from remote strain-tunable GaAs quantum dots emitting on-demand photon-pairs. We achieve this result by exploiting for the first time the full potential of a novel phonon-assisted two-photon excitation scheme, which allows for the generation of highly indistinguishable (visibility of 71 ± 9%) entangled photon-pairs (fidelity of 90 ± 2%), enables push-button biexciton state preparation (fidelity of 80 ± 2%) and outperforms conventional resonant two-photon excitation schemes in terms of robustness against environmental decoherence. Our results mark an important milestone for the practical realization of quantum repeaters and complex multiphoton entanglement experiments involving dissimilar artificial atoms.
Wavelength-tunable sources of entangled photons interfaced with atomic vapours
The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.
Dislocation-free Ge nano-crystals via pattern independent selective Ge heteroepitaxy on Si nano-tip wafers
The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.
Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers
We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.
Gain and lasing from CdSe/CdS nanoplatelet stripe waveguides
Colloidal semiconducting nanocrystals are efficient, stable and spectrally tunable emitters, but achievable optical gain is often limited by fast nonradiative processes. These processes are strongly suppressed in slab-shaped nanocrystals (nanoplatelets), due to relaxed exciton Coulomb interaction. Here, we show that CdSe/CdS nanoplatelets can be engineered into (sub)microscopic stripe waveguides that achieve lasing without further components for feedback, i.e., just relying on the stripe end reflection. We find a remarkably high gain factor for the CdSe/CdS nanoplatelets of 1630 cm−1. In addition, by comparison with numerical simulations we assign a distinct emission peak broadening above laser threshold to emission pulse shortening. Our results illustrate the feasibility of geometrically simple monolithic microscale nanoplatelet lasers as an attractive option for a variety of photonic applications.
Scanning X-ray nanodiffraction: From the experimental approach towards spatially resolved scattering simulations
An enhancement on the method of X-ray diffraction simulations for applications using nanofocused hard X-ray beams is presented. We combine finite element method, kinematical scattering calculations, and a spot profile of the X-ray beam to simulate the diffraction of definite parts of semiconductor nanostructures. The spot profile could be acquired experimentally by X-ray ptychography. Simulation results are discussed and compared with corresponding X-ray nanodiffraction experiments on single SiGe dots and dot molecules.
Nucleation chronology and electronic properties of In(As,Sb,P) graded composition quantum dots grown on InAs(100) substrate
We provide a detailed study of nucleation process, characterization, electronic and optical properties of graded composition quantum dots (GCQDs) grown from In-As-Sb-P composition liquid phase on an InAs(100) substrate in the Stranski-Krastanov growth mode. Our GCQDs exhibit diameters from 10 to 120 nm and heights from 2 to 20 nm with segregation profiles having a maximum Sb content of approximately 20% at the top and a maximum P content of approximately 15% at the bottom of the GCQDs so that hole confinement is expected in the upper parts of the GCQDs. Using an eight-band k · p model taking strain and built-in electrostatic potentials into account, we have computed the hole ground state energies and charge densities for a wide range of InAs1-x-ySbxPy GCQDs as close as possible to the systems observed in experiment. Finally, we have obtained an absorption spectrum for an ensemble of GCQDs by combining data from both experiment and theory. Excellent agreement between measured and simulated absorption spectra indicates that such GCQDs can be grown following a theory-guided design for application in specific devices.
Penetration of CdSe/ZnS quantum dots into differentiated vs undifferentiated Caco-2 cells
Background: Quantum dots (QDs) have great potential as fluorescent labels but cytotoxicity relating to extra- and intracellular degradation in biological systems has to be addressed prior to biomedical applications. In this study, human intestinal cells (Caco-2) grown on transwell membranes were used to study penetration depth, intracellular localization, translocation and cytotoxicity of CdSe/ZnS QDs with amino and carboxyl surface modifications. The focus of this study was to compare the penetration depth of QDs in differentiated vs undifferentiated cells using confocal microscopy and image processing. Results: Caco-2 cells were exposed to QDs with amino (NH2) and carboxyl (COOH) surface groups for 3 days using a concentration of 45 μg cadmium ml−1. Image analysis of confocal/multiphoton microscopy z-stacks revealed no penetration of QDs into the cell lumen of differentiated Caco-2 cells. Interestingly, translocation of cadmium ions onto the basolateral side of differentiated monolayers was observed using high resolution inductively coupled plasma mass spectrometry (ICP-MS). Membrane damage was neither detected after short nor long term incubation in Caco-2 cells. On the other hand, intracellular localization of QDs after exposure to undifferentiated cells was observed and QDs were partially located within lysosomes. Conclusions: In differentiated Caco-2 monolayers, representing a model for small intestinal enterocytes, no penetration of amino and carboxyl functionalized CdSe/ZnS QDs into the cell lumen was detected using microscopy analysis and image processing. In contrast, translocation of cadmium ions onto the basolateral side could be detected using ICP-MS. However, even after long term incubation, the integrity of the cell monolayer was not impaired and no cytotoxic effects could be detected. In undifferentiated Caco-2 cells, both QD modifications could be found in the cell lumen. Only to some extend, QDs were localized in endosomes or lysosomes in these cells. The results indicate that the differentiation status of Caco-2 cells is an important factor in internalization and localization studies using Caco-2 cells. Furthermore, a combination of microscopy analysis and sensitive detection techniques like ICP-MS are necessary for studying the interaction of cadmium containing QDs with cells.
High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots
Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10−2). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.
Numerical cooling strategy design for hot rolled dual phase steel
In this article, the Mo-Mn dual phase steel and its process parameters in hot rolling are discussed. The process window was derived by combining the experimental work in a hot deformation dilatometer and numerical calculation of process parameters using rate law models for ferrite and martensite transformation. The ferrite formation model is based on the Leblond and Devaux approach while martensite formation is based on the Koistinen-Marburger (K-M) formula. The carbon enrichment during ferrite formation is taken into account for the following martensite formation. After the completion of the parameter identification for the rate law model, the evolution of phases in multiphase steel can be addressed. Particularly, the simulations allow for predicting the preferable degree of retained strain and holding temperature on the run out table (ROT) for the required ferrite fraction.