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Subject: Surface roughness × WGL Institute: IOM ×

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Now showing 1 - 3 of 3
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    Topography evolution of germanium thin films synthesized by pulsed laser deposition
    (New York, NY : American Inst. of Physics, 2017) Schumacher, P.; Mayr, S.G.; Rauschenbach, B.
    Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.
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    Characteristics of diamond turned NiP smoothed with ion beam planarization technique
    (London : [Springer], 2017) Li, Yaguo; Takino, Hideo; Frost, Frank
    Background: Diamond turning is widely used in machining metals and semiconductors but the turning marks are incurred on machined components due to the mechanics of the technology. The marks are generally harmful to the systems comprising of the machined components. Therefore, the capability of ion beam planarization (IBP) to reduce turning marks of diamond turned metal surfaces was investigated using NiP as an example. Methods: The turning marks and thereby roughness was reduced by IBP with respect to different spatial wavelengths and amplitudes of turning marks. Different thickness of coating resist was also examined in order to find out the potential effects of resist thickness on the reduction of turning marks and roughness. Additionally, the effect of multiple planarization steps was also analyzed. Results: The spatial wavelength and depth of turning marks have only minor impact on the degree of surface roughness reduction. Thicker coating tends to achieve smoother surface after coating turned NiP while ion beam etching can keep surface roughness almost unchanged in our experiments. The surface roughness of diamond turned NiP drops exponentially with processing steps under experimented conditions. Using up to five IBP steps, the surface roughness can be reduced up to one order of magnitude (from Rq ~ 6.5 nm to Rq ~ 0.7 nm). Conclusions: IBP technique performs very well in reducing turning marks on diamond turned NiP surfaces. The surface roughness can be further improved by optimizing the properties of planarizing resist layer and coating processes to enhance the IBP technique as a final surface finishing technology.
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    Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition
    (Heidelberg [u.a.] : Springer, 2017) Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, Bernd
    The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.