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Subject: Transistors × WGL Institute: IFWD ×

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Now showing 1 - 3 of 3
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    Applications of Carbon Nanotubes in the Internet of Things Era
    (Berlin ; Heidelberg [u.a.] : Springer, 2021) Pang, Jinbo; Bachmatiuk, Alicja; Yang, Feng; Liu, Hong; Zhou, Weijia; Rümmeli, Mark H.; Cuniberti, Gianaurelio
    The post-Moore's era has boosted the progress in carbon nanotube-based transistors. Indeed, the 5G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic devices. In this perspective, we deliver the readers with the latest trends in carbon nanotube research, including high-frequency transistors, biomedical sensors and actuators, brain-machine interfaces, and flexible logic devices and energy storages. Future opportunities are given for calling on scientists and engineers into the emerging topics.
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    Integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes
    (New York, NY [u.a.] : Springer, 2011) Harazim, S.M.; Feng, P.; Sanchez, S.; Deneke, C.; Mei, Y.; Schmidt, O.G.
    Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.
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    X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
    (Washington, DC : American Chemical Society, 2011) Hrauda, N.; Zhang, J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C.; Nanver, L.K.; Moers, J.; Grützmacher, D.; Bauer, G.
    For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.