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Subject: article × Subject: chemistry × WGL Institute: IFWD ×

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    Poisoning of bubble propelled catalytic micromotors: The chemical environment matters
    (Cambridge [u.a.] : Royal Society of Chemistry, 2013) Zhao, G.; Sanchez, S.; Schmidt, O.G.; Pumera, M.
    Self-propelled catalytic microjets have attracted considerable attention in recent years and these devices have exhibited the ability to move in complex media. The mechanism of propulsion is via the Pt catalysed decomposition of H2O2 and it is understood that the Pt surface is highly susceptible to poisoning by sulphur-containing molecules. Here, we show that important extracellular thiols as well as basic organic molecules can significantly hamper the motion of catalytic microjet engines. This is due to two different mechanisms: (i) molecules such as dimethyl sulfoxide can quench the hydroxyl radicals produced at Pt surfaces and reduce the amount of oxygen gas generated and (ii) molecules containing -SH, -SSR, and -SCH3 moieties can poison the catalytically active platinum surface, inhibiting the motion of the jet engines. It is essential that the presence of such molecules in the environment be taken into consideration for future design and operation of catalytic microjet engines. We show this effect on catalytic micromotors prepared by both rolled-up and electrodeposition approaches, demonstrating that such poisoning is universal for Pt catalyzed micromotors. We believe that our findings will contribute significantly to this field to develop alternative systems or catalysts for self-propulsion when practical applications in the real environment are considered.
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    X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
    (Washington, DC : American Chemical Society, 2011) Hrauda, N.; Zhang, J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C.; Nanver, L.K.; Moers, J.; Grützmacher, D.; Bauer, G.
    For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.