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Femtosecond Field‐Driven On‐Chip Unidirectional Electronic Currents in Nonadiabatic Tunneling Regime
Recently, asymmetric plasmonic nanojunctions have shown promise as on-chip electronic devices to convert femtosecond optical pulses to current bursts, with a bandwidth of multi-terahertz scale, although yet at low temperatures and pressures. Such nanoscale devices are of great interest for novel ultrafast electronics and opto-electronic applications. Here, the device is operated in air and at room temperature, revealing the mechanisms of photoemission from plasmonic nanojunctions, and the fundamental limitations on the speed of optical-to-electronic conversion. Inter-cycle interference of coherent electronic wavepackets results in a complex energy electron distribution and birth of multiphoton effects. This energy structure, as well as reshaping of the wavepackets during their propagation from one tip to the other, determine the ultrafast dynamics of the current. It is shown that, up to some level of approximation, the electron flight time is well-determined by the mean ponderomotive velocity in the driving field.
Modeling of quantum dot lasers with microscopic treatment of Coulomb effects
We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates and dephasing times, that essentially depend via Coulomb interaction on the carrier densities, with macroscopic transport equations and equations for the optical field.78A60 68U2078A60 68U20
Towards doping optimization of semiconductor lasers
We discuss analytical and numerical methods for the optimization of optoelectronic devices by performing optimal control of the PDE governing the carrier transport with respect to the doping profile. First, we provide a cost functional that is a sum of a regularization and a contribution, which is motivated by the modal net gain that appears in optoelectronic models of bulk or quantum-well lasers. Then, we state a numerical discretization, for which we study optimized solutions for different regularizations and for vanishing weights.