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Subject: semiconductor heterostructures ×

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    The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates
    (Weinheim : Wiley-VCH, 2019) Niehle, Michael; Rodriguez, Jean-Baptiste; Cerutti, Laurent; Tournié, Eric; Trampert, Achim
    Several nanometer high steps are observed by (scanning) transmission electron microscopy at the surface and interfaces in heteroepitaxially grown III–Sb layers on vicinal Si(001) substrates. Their relations with antiphase boundaries (APBs) and threading dislocations (TDs) are elaborated. An asymmetric number density of TDs on symmetry-equivalent {111} lattice planes is revealed and explained according to the substrate miscut and the lattice misfit in the heteroepitaxial material system. Finally, a step bunching mechanism is proposed based on the interplay of APBs, TDs, and the vicinal surface of the miscut substrate.
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    WIAS-TeSCA - Two-dimensional semi-conductor analysis package
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Gajewski, Herbert; Liero, Matthias; Nürnberg, Reiner; Stephan, Holger
    WIAS-TeSCA (Two- and three-dimensional semiconductor analysis package) is a simulation tool for the numerical simulation of charge transfer processes in semiconductor structures, especially in semiconductor lasers. It is based on the drift-diffusion model and considers a multitude of additional physical effects, like optical radiation, temperature influences and the kinetics of deep impurities. Its efficiency is based on the analytic study of the strongly nonlinear system of partial differential equations – the van Roosbroeck system – which describes the electron and hole currents. Very efficient numerical procedures for both the stationary and transient simulation have been implemented. WIAS-TeSCA has been successfully used in the research and industrial development of new electronic and optoelectronic semiconductor devices such as transistors, diodes, sensors, detectors and lasers and has already proved its worth many times in the planning and optimization of these devices. It covers a broad spectrum of applications, from heterobipolar transistor (mobile telephone systems, computer networks) through high-voltage transistors (power electronics) and semiconductor laser diodes (fiber optic communication systems, medical technology) to radiation detectors (space research, high energy physics). WIAS-TeSCA is an efficient simulation tool for analyzing and designing modern semiconductor devices with a broad range of performance that has proved successful in solving many practical problems. Particularly, it offers the possibility to calculate self-consistently the interplay of electronic, optical and thermic effects.
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    Analysis of a hybrid model for the electrothermal behavior of semiconductor heterostructures
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Glitzky, Annegret; Liero, Matthias; Nika, Grigor
    We prove existence of a weak solution for a hybrid model for the electro-thermal behavior of semiconductor heterostructures. This hybrid model combines an electro-thermal model based on drift-diffusion with thermistor type models in different subregions of the semiconductor heterostructure. The proof uses a regularization method and Schauder's fixed point theorem. For boundary data compatible with thermodynamic equilibrium we verify, additionally, uniqueness. Moreover, we derive bounds and higher integrability properties for the electrostatic potential and the quasi Fermi potentials as well as the temperature.