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Subject: transport × WGL Institute: WIAS ×

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    Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Kantner, Markus; Koprucki, Thomas
    At cryogenic temperatures the electron-hole plasma in semiconductor materials becomes strongly degenerate, leading to very sharp internal layers, extreme depletion in intrinsic domains and strong nonlinear diffusion. As a result, the numerical simulation of the drift-diffusion system suffers from serious convergence issues using standard methods. We consider a one-dimensional p-i-n diode to illustrate these problems and present a simple temperature-embedding scheme to enable the numerical simulation at cryogenic temperatures. The method is suitable for forward-biased devices as they appear e.g. in optoelectronic applications.
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    Modeling of quantum dot lasers with microscopic treatment of Coulomb effects
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Koprucki, Thomas; Wilms, Alexander; Knorr, Andreas; Bandelow, Uwe
    We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates and dephasing times, that essentially depend via Coulomb interaction on the carrier densities, with macroscopic transport equations and equations for the optical field.78A60 68U2078A60 68U20