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Subject: traveling wave model ×

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Now showing 1 - 10 of 10
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    Effective Numerical Algorithm for Simulations of Beam Stabilization in Broad Area Semiconductor Lasers and Amplifiers
    (Milton Park : Taylor and Francis Ltd., 2014) Radziunas, M.; Čiegis, R.
    Abstract: A 2 + 1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented. The domain decomposition method is used to parallelize the sequential algorithm. The parallel algorithm is implemented by using Message Passing Interface system, results of computational experiments are presented and the scalability of the algorithm is analyzed. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts.
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    Dynamics of an inhomogeneously broadened passively mode-locked laser
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Pimenov, Alexander; Vladimirov, Andrei G.
    We study theoretically the effect of inhomogeneous broadening of the gain and absorption lines on the dynamics of a passively mode-locked laser. We demonstrate numerically using travelling wave equations the formation of a Lamb-dip instability and suppression of Q-switching in a laser with large inhomogeneous broadening. We derive simplified delay-differential equation model for a mode-locked laser with inhomogeneously broadened gain and absorption lines and perform numerical bifurcation analysis of this model.
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    Beam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Botey, Muriel; Herrero, Ramon; Staliunas, Kestutis
    We investigate beam shaping in broad area semiconductor amplifiers induced by a periodic modulation of the pump on a scale of several microns. The study is performed by solving numerically a (2+1)-dimensional model for the semiconductor amplifier. We show that, under realistic conditions, the anisotropic gain induced by the pump periodicity can show narrow angular profile of enhanced gain of less than one degree, providing an intrinsic filtering mechanism and eventually improving the spatial beam quality.
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    Spatial "rocking" for improving the spatial quality of the beam of broad area semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012) Radziunas, Mindaugas; Staliunas, Kestutis
    The spatial ``rocking'' is a dynamical effect converting a phase-invariant oscillatory system into a phase-bistable one, where the average phase of the system locks to one of two values differing by pi. We demonstrate theoretically the spatial rocking in experimentally accessible and practically relevant systems -- the broad area semiconductor lasers. By numerical integration of the laser model equations we show the phase bistability of the optical fields and explore the bistability area in parameter space. We also predict the spatial patterns, such as phase domain walls and phase solitons, which are characteristic for the phase-bistable spatially extended pattern forming systems.
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    Mode transitions in DBR semiconductor lasers: experiments, mode analysis and simulations
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Hasler, Karl-Heinz; Sumpf, Bernd; Tien, Tran Quoc; Wenzel, Hans
    The paper is concerned with a general ansatz of a phenomenological evolution model for solid-solid phase transformation kinetics in steel. To model the phase transition of austenite-ferrite, -pearlite or -bainite, a first order nonlinear ordinary differential equation (ODE) is considered. The main goal of this paper is to derive certain conditions for parameters which based on data obtained from transformation diagrams. This leads to a set of independent parameters for which the inverse problem has an unique solution
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    Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Cˇ iegis, Raimondas
    A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts
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    Dynamics of micro-integrated external-cavity diode lasers: Simulations, analysis and experiments
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Radziunas, Mindaugas; Tronciu, Vasile Z.; Luvsandamdin, Erdenetsetseg; Kürbis, Christian; Wicht, Andreas; Wenzel, Hans
    This paper reports the results of numerical and experimental investigations of the dynamics of an external cavity diode laser device composed of a semiconductor laser and a distant Bragg grating, which provides an optical feedback. Due to the influence of the feedback, this system can operate at different dynamic regimes. The traveling wave model is used for simulations and analysis of the nonlinear dynamics in the considered laser device. Based on this model, a detailed analysis of the optical modes is performed, and the stability of the stationary states is discussed. It is shown, that the results obtained from the simulation and analysis of the device are in good agreement with experimental findings.
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    Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Radziunas, Mindaugas; Herrero, Ramon; Botey, Muriel; Staliunas, Kestutis
    We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.
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    Semiconductor laser linewidth theory revisited
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2021) Wenzel, Hans; Kantner, Markus; Radziunas, Mindaugas; Bandelow, Uwe
    More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective Alpha-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.
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    Tunable semiconductor ring laser with filtered optical feedback: Traveling wave description and experimental validation
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Radziunas, Mindaugas; Khoder, Mulham; Tronciu, Vasile; Danckaert, Jan; Verschaffelt, Guy
    We study experimentally and theoretically a semiconductor ring laser with four filtering channels providing filtered delayed optical feedback. To describe and analyze the wavelength selection and tuning in this device, we exploit the traveling-wave model determining the evolution of optical fields and carrier density along the ring cavity and filtering branches. The numerical results agree with the experimental observations: we can reproduce the wavelength tuning, the multiple wavelength emission, and the wavelength switching speed measured in these devices. The traveling-wave model allows us to study in detail the effect of the different laser parameters and can be useful for designing the future devices.