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| Title: | Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy |
| Authors: | Paik, Hanjong; Chen, Zhen; Lochocki, Edward; Seidner H., Ariel; Verma, Amit; Tanen, Nicholas; Park, Jisung; Uchida, Masaki; Shang, ShunLi; Zhou, Bi-Cheng; Brützam, Mario; Uecker, Reinhard; Liu, Zi-Kui; Jena, Debdeep; Shen, Kyle M.; Muller, David A.; Schlom, Darrell G. |
| Publishers version: | https://doi.org/10.1063/1.5001839 |
| URI: | https://oa.tib.eu/renate/handle/123456789/11664 http://dx.doi.org/10.34657/10697 |
| Issue Date: | 2017 |
| Published in: | APL Materials 5 (2017), Nr. 11 |
| Journal: | APL Materials |
| Volume: | 5 |
| Issue: | 11 |
| Page Start: | 116107 |
| Publisher: | Melville, NY : AIP Publ. |
| Abstract: | Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility. |
| Keywords: | Dysprosium compounds; Epitaxial growth; Lanthanum compounds; Molecular beam epitaxy; Molecular beams; Point defects; Scandium compounds; Single crystals; Tin compounds |
| Type: | article; Text |
| Publishing status: | publishedVersion |
| DDC: | 620 600 |
| License: | CC BY 4.0 Unported |
| Link to license: | https://creativecommons.org/licenses/by/4.0/ |
| Appears in Collections: | Ingenieurwissenschaften |
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Paik, Hanjong, Zhen Chen, Edward Lochocki, Ariel Seidner H., Amit Verma, Nicholas Tanen, Jisung Park, Masaki Uchida, ShunLi Shang, Bi-Cheng Zhou, Mario Brützam, Reinhard Uecker, Zi-Kui Liu, Debdeep Jena, Kyle M. Shen, David A. Muller and Darrell G. Schlom, 2017. Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. 2017. Melville, NY : AIP Publ.
Paik, H., Chen, Z., Lochocki, E., Seidner H., A., Verma, A., Tanen, N., Park, J., Uchida, M., Shang, S., Zhou, B.-C., Brützam, M., Uecker, R., Liu, Z.-K., Jena, D., Shen, K. M., Muller, D. A. and Schlom, D. G. (2017) “Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy.” Melville, NY : AIP Publ. doi: https://doi.org/10.1063/1.5001839.
Paik H, Chen Z, Lochocki E, Seidner H. A, Verma A, Tanen N, Park J, Uchida M, Shang S, Zhou B-C, Brützam M, Uecker R, Liu Z-K, Jena D, Shen K M, Muller D A, Schlom D G. Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. Vol. 5. Melville, NY : AIP Publ.; 2017.
Paik, H., Chen, Z., Lochocki, E., Seidner H., A., Verma, A., Tanen, N., Park, J., Uchida, M., Shang, S., Zhou, B.-C., Brützam, M., Uecker, R., Liu, Z.-K., Jena, D., Shen, K. M., Muller, D. A., & Schlom, D. G. (2017). Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy (Version publishedVersion, Vol. 5). Version publishedVersion, Vol. 5. Melville, NY : AIP Publ. https://doi.org/https://doi.org/10.1063/1.5001839
Paik H, Chen Z, Lochocki E, Seidner H. A, Verma A, Tanen N, Park J, Uchida M, Shang S, Zhou B-C, Brützam M, Uecker R, Liu Z-K, Jena D, Shen K M, Muller D A, Schlom D G. Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. 2017;5(11). doi:https://doi.org/10.1063/1.5001839
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