Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy


Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.

Dysprosium compounds, Epitaxial growth, Lanthanum compounds, Molecular beam epitaxy, Molecular beams, Point defects, Scandium compounds, Single crystals, Tin compounds
Paik, H., Chen, Z., Lochocki, E., Seidner H., A., Verma, A., Tanen, N., et al. (2017). Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. 5(11).
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