The spin-flip scattering effect in the spin transport in silicon doped with bismuth

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Date
2017
Volume
816
Issue
Journal
Journal of Physics: Conference Series
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Publisher
Bristol : IOP Publ.
Abstract

Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.1•1013 - 7.7•1015 cm-3 concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum of the normal and spin Hall effects. The electrons are partially polarized by an external magnetic field and are scattered by the bismuth spin-orbit potential. Spin-flip scattering results in the additional electromotive force which compensates the normal Hall effect in strong magnetic fields.

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Ezhevskii, A. A., Detochenko, A. P., Soukhorukov, A. V., Guseinov, D. V., Kudrin, A. V., Abrosimov, N. V., & Riemann, H. (2017). The spin-flip scattering effect in the spin transport in silicon doped with bismuth (Bristol : IOP Publ.). Bristol : IOP Publ. https://doi.org//10.1088/1742-6596/816/1/012001
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CC BY 3.0 Unported