Beam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiers

We investigate beam shaping in broad area semiconductor amplifiers induced by a periodic modulation of the pump on a scale of several microns. The study is performed by solving numerically a (2+1)-dimensional model for the semiconductor amplifier. We show that, under realistic conditions, the anisotropic gain induced by the pump periodicity can show narrow angular profile of enhanced gain of less than one degree, providing an intrinsic filtering mechanism and eventually improving the spatial beam quality.

Keywords

Broad area semiconductor amplifier, periodic modulation, spatial modulation, angular filtering, beam shaping, far field, quality improvement, traveling wave model

URI

https://doi.org/10.34657/2041
https://oa.tib.eu/renate/handle/123456789/1855

Citation

Radziunas, M., Botey, M., Herrero, R., & Staliunas, K. (2013). Beam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiers (Vol. 1790). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.

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Mathematik

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