Broadening of mode-locking pulses in quantum-dot semiconductor lasers : simulation, analysis and experiments

We consider a mode-locked quantum-dot edge-emitting semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model taking into account carrier exchange processes between a reservoir and the quantum dots. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two section quantum dot mode-locked laser

Keywords

Mode-locking, semiconductor laser, quantum dots, saturable absorber, pulse broadening, trailing edge

URI

https://doi.org/10.34657/2097
https://oa.tib.eu/renate/handle/123456789/2594

Citation

Radziunas, M., Vladimirov, A. G., Viktorov, E. A., Fiol, G., Schmeckebier, H., & Bimberg, D. (2010). Broadening of mode-locking pulses in quantum-dot semiconductor lasers : simulation, analysis and experiments (Vol. 1584). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.

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Mathematik

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