Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns

Abstract

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Description
Keywords
GaN nanocolumns, ordered growth, molecular beam epitaxy, surface cleaning, roughness, adhesion, e-beam lithography, colloidal lithography, focused ion beam
Citation
Barbagini, F., Bengoechea-Encabo, A., Albert, S., Martinez, J., Sanchez García, M. A., Trampert, A., & Calleja, E. (2011). Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns. 6(1). https://doi.org//10.1186/1556-276X-6-632
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License
CC BY 2.0 Unported