Ferroelectric switching in epitaxial GeTe films

Loading...
Thumbnail Image
Date
2014
Volume
2
Issue
6
Journal
Series Titel
Book Title
Publisher
New York : American Institute of Physics
Link to publishers version
Abstract

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

Description
Keywords
Epitaxy, Spectroscopy, Computer simulation, Density functional theory, Ferroelectricity, Thin films, Magnetic materials, Chemical elements, Phase transitions, Piezoresponse force spectroscopy
Citation
Kolobov, A. V., Kim, D. J., Giussani, A., Fons, P., Tominaga, J., Calarco, R., & Gruverman, A. (2014). Ferroelectric switching in epitaxial GeTe films. 2(6). https://doi.org//10.1063/1.4881735
Collections
License
CC BY 3.0 Unported