Scalable, high power line focus diode laser for crystallizing of silicon thin films

We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.

Keywords

Amorphous silicon, Homogenizer, Laser crystallization, Laser diode, Line focus, Material processing, Optics, Photovoltaic, Amorphous silicon, Diodes, Metal forming, Optics, Photoelectrochemical cells, Photovoltaic cells, Power semiconductor diodes, Semiconductor lasers, Silicon, Solar power generation, Homogenizers, Laser crystallization, Line-focus, Material processing, Photovoltaic, Laser materials processing

URI

https://doi.org/10.34657/4184
https://oa.tib.eu/renate/handle/123456789/5555

Citation

Lichtenstein, N., Baettig, R., Brunner, R., Müller, J., Valk, B., Gawlik, A., et al. (2010). Scalable, high power line focus diode laser for crystallizing of silicon thin films. 5(PART 1). https://doi.org//10.1016/j.phpro.2010.08.127

Collections

Physik

License

CC BY-NC-ND 3.0 Unported

https://creativecommons.org/licenses/by-nc-nd/3.0/

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