Near-field dynamics of broad area diode laser at very high pump levels

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Date
2011
Volume
1
Issue
4
Journal
AIP Advances
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Publisher
New York, NY : American Inst. of Physics
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Abstract

Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.

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Hempel, M., Tomm, J. W., Baeumler, M., Konstanzer, H., Mukherjee, J., & Elsaesser, T. (2011). Near-field dynamics of broad area diode laser at very high pump levels (New York, NY : American Inst. of Physics). New York, NY : American Inst. of Physics. https://doi.org//10.1063/1.3664745
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CC BY 3.0 Unported