Near-field dynamics of broad area diode laser at very high pump levels
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Date
2011
Volume
1
Issue
4
Journal
Series Titel
Book Title
Publisher
New York, NY : American Inst. of Physics
Link to publishers version
Abstract
Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.
Description
Keywords
Broad area diode lasers, Broad-area semiconductor, Catastrophic optical damages, Index guiding, Near-field, Output power, Picosecond time scale, Single pulse, Time-averaged, Dynamics, Semiconductor diodes, Semiconductor lasers
Citation
Hempel, M., Tomm, J. W., Baeumler, M., Konstanzer, H., Mukherjee, J., & Elsaesser, T. (2011). Near-field dynamics of broad area diode laser at very high pump levels. 1(4). https://doi.org//10.1063/1.3664745
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License
CC BY 3.0 Unported