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Title: 168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology
Authors: Ali, AbdulYun, JongwonGiannini, FrancoNg, Herman JalliKissinger, DietmarColantonio, Paolo
Publishers version: https://doi.org/10.1109/ACCESS.2020.2990681
URI: https://oa.tib.eu/renate/handle/123456789/7277
https://doi.org/10.34657/6324
Issue Date: 2020
Published in: IEEE access : practical research, open solutions 8 (2020)
Journal: IEEE access : practical research, open solutions
Volume: 8
Page Start: 79299
Page End: 79309
Publisher: New York, NY : IEEE
Abstract: This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and an output power higher than 27 dB and 13 dBm, respectively. Then, a 4-way combiner/splitter was designed using low-loss transmission lines at 130-210 GHz. Finally, the combiner was loaded with four single-ended PAs to complete the design of a 4-way combined PA. The chip of the fabricated PA occupies an area of 1.35mm2. The realized PA shows a saturated output power of 18.1 dBm with a peak gain of 25.9 dB and power-added efficiency (PAE) of 3.5% at 185 GHz. A maximum output power of 18.7 dBm with PAE of 4.4% is achieved at 170 GHz. The 3-dB and 6-dB bandwidth of the PA are 27 and 42 GHz, respectively. In addition, the PA delivers a saturated output power higher than 18 dBm in the frequency range 140-186 GHz. To the best of our knowledge, the power reported in this paper is the highest for G-band SiGe BiCMOS PAs. © 2013 IEEE.
Keywords: 4-way combiner; Cascode; G-band PA; power amplifier; SiGe BiCMOS
Type: article; Text
Publishing status: publishedVersion
DDC: 004
621.3
License: CC BY 4.0 Unported
Link to license: https://creativecommons.org/licenses/by/4.0/
Appears in Collections:Informatik

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Ali, Abdul, Jongwon Yun, Franco Giannini, Herman Jalli Ng, Dietmar Kissinger and Paolo Colantonio, 2020. 168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology. 2020. New York, NY : IEEE
Ali, A., Yun, J., Giannini, F., Ng, H. J., Kissinger, D. and Colantonio, P. (2020) “168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology.” New York, NY : IEEE. doi: https://doi.org/10.1109/ACCESS.2020.2990681.
Ali A, Yun J, Giannini F, Ng H J, Kissinger D, Colantonio P. 168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology. Vol. 8. New York, NY : IEEE; 2020.
Ali, A., Yun, J., Giannini, F., Ng, H. J., Kissinger, D., & Colantonio, P. (2020). 168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology (Version publishedVersion, Vol. 8). Version publishedVersion, Vol. 8. New York, NY : IEEE. https://doi.org/https://doi.org/10.1109/ACCESS.2020.2990681
Ali A, Yun J, Giannini F, Ng H J, Kissinger D, Colantonio P. 168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology. 2020;8. doi:https://doi.org/10.1109/ACCESS.2020.2990681


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