Please use this identifier to cite or link to this item:
https://oa.tib.eu/renate/handle/123456789/7506
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation.pdf | 2,81 MB | Adobe PDF | View/Open |
Title: | Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation |
Authors: | Fernández-Garrido, Sergio; Auzelle, Thomas; Lähnemann, Jonas; Wimmer, Kilian; Tahraoui, Abbes; Brandt, Oliver |
Publishers version: | https://doi.org/10.1039/c8na00369f |
URI: | https://oa.tib.eu/renate/handle/123456789/7506 https://doi.org/10.34657/6553 |
Issue Date: | 2019 |
Published in: | Nanoscale advances 1 (2019), Nr. 5 |
Journal: | Nanoscale advances |
Volume: | 1 |
Issue: | 5 |
Page Start: | 1893 |
Page End: | 1900 |
Publisher: | Cambridge : Royal Society of Chemistry |
Abstract: | We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al2O3. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 µm, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under high vacuum conditions, is analyzed in situ by reflection high-energy electron diffraction and line-of-sight quadrupole mass spectrometry. During the sublimation process, the GaN(0001) surface vanishes, giving way to the formation of semi-polar {1103} facets which decompose congruently following an Arrhenius temperature dependence with an activation energy of (3.54 ± 0.07) eV and an exponential prefactor of 1.58 × 1031 atoms per cm2 per s. The analysis of the samples by lowerature cathodoluminescence spectroscopy reveals that, in contrast to dry etching, the sublimation process does not introduce nonradiative recombination centers at the nanowire sidewalls. This technique is suitable for the top-down fabrication of a variety of ordered nanostructures, and could possibly be extended to other material systems with similar crystallographic properties such as ZnO. © 2019 The Royal Society of Chemistry. |
Keywords: | GaN nanowire; hydride vapor phase epitaxy; ordered nanostructure |
Type: | article; Text |
Publishing status: | publishedVersion |
DDC: | 540 |
License: | CC BY-NC 3.0 Unported |
Link to license: | https://creativecommons.org/licenses/by-nc/3.0/ |
Appears in Collections: | Chemie |
Show full item record
Fernández-Garrido, Sergio, Thomas Auzelle, Jonas Lähnemann, Kilian Wimmer, Abbes Tahraoui and Oliver Brandt, 2019. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. 2019. Cambridge : Royal Society of Chemistry
Fernández-Garrido, S., Auzelle, T., Lähnemann, J., Wimmer, K., Tahraoui, A. and Brandt, O. (2019) “Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation.” Cambridge : Royal Society of Chemistry. doi: https://doi.org/10.1039/c8na00369f.
Fernández-Garrido S, Auzelle T, Lähnemann J, Wimmer K, Tahraoui A, Brandt O. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. Vol. 1. Cambridge : Royal Society of Chemistry; 2019.
Fernández-Garrido, S., Auzelle, T., Lähnemann, J., Wimmer, K., Tahraoui, A., & Brandt, O. (2019). Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation (Version publishedVersion, Vol. 1). Version publishedVersion, Vol. 1. Cambridge : Royal Society of Chemistry. https://doi.org/https://doi.org/10.1039/c8na00369f
Fernández-Garrido S, Auzelle T, Lähnemann J, Wimmer K, Tahraoui A, Brandt O. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. 2019;1(5). doi:https://doi.org/10.1039/c8na00369f
This item is licensed under a Creative Commons License