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Title: Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Authors: Fernández-Garrido, SergioAuzelle, ThomasLähnemann, JonasWimmer, KilianTahraoui, AbbesBrandt, Oliver
Publishers version: https://doi.org/10.1039/c8na00369f
URI: https://oa.tib.eu/renate/handle/123456789/7506
https://doi.org/10.34657/6553
Issue Date: 2019
Published in: Nanoscale advances 1 (2019), Nr. 5
Journal: Nanoscale advances
Volume: 1
Issue: 5
Page Start: 1893
Page End: 1900
Publisher: Cambridge : Royal Society of Chemistry
Abstract: We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al2O3. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 µm, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under high vacuum conditions, is analyzed in situ by reflection high-energy electron diffraction and line-of-sight quadrupole mass spectrometry. During the sublimation process, the GaN(0001) surface vanishes, giving way to the formation of semi-polar {1103} facets which decompose congruently following an Arrhenius temperature dependence with an activation energy of (3.54 ± 0.07) eV and an exponential prefactor of 1.58 × 1031 atoms per cm2 per s. The analysis of the samples by lowerature cathodoluminescence spectroscopy reveals that, in contrast to dry etching, the sublimation process does not introduce nonradiative recombination centers at the nanowire sidewalls. This technique is suitable for the top-down fabrication of a variety of ordered nanostructures, and could possibly be extended to other material systems with similar crystallographic properties such as ZnO. © 2019 The Royal Society of Chemistry.
Keywords: GaN nanowire; hydride vapor phase epitaxy; ordered nanostructure
Type: article; Text
Publishing status: publishedVersion
DDC: 540
License: CC BY-NC 3.0 Unported
Link to license: https://creativecommons.org/licenses/by-nc/3.0/
Appears in Collections:Chemie

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Fernández-Garrido, Sergio, Thomas Auzelle, Jonas Lähnemann, Kilian Wimmer, Abbes Tahraoui and Oliver Brandt, 2019. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. 2019. Cambridge : Royal Society of Chemistry
Fernández-Garrido, S., Auzelle, T., Lähnemann, J., Wimmer, K., Tahraoui, A. and Brandt, O. (2019) “Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation.” Cambridge : Royal Society of Chemistry. doi: https://doi.org/10.1039/c8na00369f.
Fernández-Garrido S, Auzelle T, Lähnemann J, Wimmer K, Tahraoui A, Brandt O. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. Vol. 1. Cambridge : Royal Society of Chemistry; 2019.
Fernández-Garrido, S., Auzelle, T., Lähnemann, J., Wimmer, K., Tahraoui, A., & Brandt, O. (2019). Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation (Version publishedVersion, Vol. 1). Version publishedVersion, Vol. 1. Cambridge : Royal Society of Chemistry. https://doi.org/https://doi.org/10.1039/c8na00369f
Fernández-Garrido S, Auzelle T, Lähnemann J, Wimmer K, Tahraoui A, Brandt O. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. 2019;1(5). doi:https://doi.org/10.1039/c8na00369f


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