Axial GaAs/Ga(As, Bi) nanowire heterostructures

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Date
2019
Volume
20
Issue
42
Journal
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Publisher
Bristol : IOP Publ.
Abstract

Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth conditions, which pose severe challenges for planar growth. In this work, we exploit the naturally-Ga-rich environment present inside the metallic droplet of a self-catalyzed GaAs nanowire (NW) to synthesize metastable GaAs/GaAs1-xBi x axial NW heterostructures with high Bi contents. The axial GaAs1-xBi x segments are realized with molecular beam epitaxy by first enriching only the vapor-liquid-solid (VLS) Ga droplets with Bi, followed by exposing the resulting Ga-Bi droplets to As2 at temperatures ranging from 270 °C to 380 °C to precipitate GaAs1-xBi x only under the NW droplets. Microstructural and elemental characterization reveals the presence of single crystal zincblende GaAs1-xBi x axial NW segments with Bi contents up to (10 ± 2)%. This work illustrates how the unique local growth environment present during the VLS NW growth can be exploited to synthesize heterostructures with metastable compounds. © 2019 IOP Publishing Ltd.

Description
Keywords
energy-dispersive x-ray spectroscopy, Ga(As, Bi), heterostructures, molecular beam epitaxy, nanowires, transmission electron microscopy
Citation
Oliva, M., Gao, G., Luna, E., Geelhaar, L., & Lewis, R. B. (2019). Axial GaAs/Ga(As, Bi) nanowire heterostructures. 20(42). https://doi.org//10.1088/1361-6528/ab3209
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License
CC BY 4.0 Unported