High-temperature electromechanical loss in piezoelectric langasite and catangasite crystals

Temperature-dependent acoustic loss Q−1 is studied in partially disordered langasite (LGS, La3Ga5SiO14) and ordered catangasite (CTGS, Ca3TaGa3Si2O14) crystals and compared with previously reported CTGS and langatate (LGT, La3Ga5.5Ta0.5O14) data. Two independent techniques, a contactless tone-burst excitation technique and contacting resonant piezoelectric spectroscopy, are used in this study. Contributions to the measured Q−1(T) are determined through fitting to physics-based functions, and the extracted fit parameters, including the activation energies of the processes, are discussed. It is shown that losses in LGS and CTGS are caused by a superposition of several mechanisms, including intrinsic phonon–phonon loss, point-defect relaxations, and conductivity-related relaxations.

Keywords

Activation energy, Calcium compounds, Crystals, Gallium compounds, Phonons, Piezoelectricity, Silicon, Silicon compounds, Tantalum compounds, Acoustic loss, Defect relaxation, Excitation technique, Physics-based, Piezoelectric spectroscopy, Temperature dependent, Lanthanum compounds

URI

https://oa.tib.eu/renate/handle/123456789/8170
https://doi.org/10.34657/7209

Citation

Suhak, Y., Fritze, H., Sotnikov, A., Schmidt, H., & Johnson, W. L. (2021). High-temperature electromechanical loss in piezoelectric langasite and catangasite crystals. 130(8). https://doi.org//10.1063/5.0058751

Collections

Physik

License

CC BY 4.0 Unported

https://creativecommons.org/licenses/by/4.0/

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