Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices

We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.

Keywords

Non-isothermal drift-diffusion, organic semiconductors, finite volumes, generalized Scharfetter-Gummel scheme, path following

URI

https://oa.tib.eu/renate/handle/123456789/9214
https://doi.org/10.34657/8252

Citation

Doan, D. H., Fischer, A., Fuhrmann, J., Glitzky, A., & Liero, M. (2019). Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices (Vol. 2630). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik. https://doi.org//10.20347/WIAS.PREPRINT.2630

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Mathematik

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