Unipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices

We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.

Keywords

Non-isothermal drift-diffusion, organic semiconductors, finite volumes, generalized Scharfetter--Gummel scheme, path following

URI

https://oa.tib.eu/renate/handle/123456789/9244
https://doi.org/10.34657/8282

Citation

Fuhrmann, J., Doan, D. H., Glitzky, A., Liero, M., & Nika, G. (2019). Unipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices (Vol. 2660). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik. https://doi.org//10.20347/WIAS.PREPRINT.2660

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Mathematik

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