Doping optimization for optoelectronic devices

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Date
2018
Volume
2501
Issue
Journal
Series Titel
Book Title
Publisher
Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
Abstract

We present a mathematical and numerical framework for the optimal design of doping profiles for optoelectronic devices using methods from mathematical optimization. With the goal to maximize light emission and reduce the thresholds of an edge-emitting laser, we consider a driftdiffusion model for charge transport and include modal gain and total current into a cost functional, which we optimize in cross sections of the emitter. We present 1D and 2D results for exemplary setups that point out possible routes for device improvement.

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Keywords
Optoelectronics, drift-diffusion model, second-order optimization
Citation
Peschka, D., Rotundo, N., & Thomas, M. (2018). Doping optimization for optoelectronic devices (Vol. 2501). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik. https://doi.org//10.20347/WIAS.PREPRINT.2501
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