Long-term stability of GaAs/AlAs terahertz quantum-cascade lasers

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Date
2022
Volume
12
Issue
8
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Publisher
New York, NY : American Inst. of Physics
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Abstract

We have investigated high-performance GaAs/AlAs terahertz (THz) quantum-cascade lasers (QCLs) with respect to the long-term stability of their operating parameters. The output power of lasers that contain an additional, thick AlAs refractive-index contrast layer underneath the cascade structure decreases after three months by about 35%. The deterioration of these lasers is attributed to the oxidation processes in this contrast layer starting from the facets. However, GaAs/AlAs THz QCLs with an Al0.9Ga0.1As refractive-index contrast layer exhibit long-term stability of the operating parameters over many years even when they are exposed to atmospheric conditions. Therefore, these lasers are promising high-power radiation sources in the terahertz spectral region for commercial applications.

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Keywords
Aluminum arsenide, Deterioration, Gallium arsenide, III-V semiconductors, Quantum cascade lasers, Semiconducting gallium, Semiconductor alloys, Terahertz waves
Citation
Schrottke, L., Lü, X., Biermann, K., Gellie, P., & Grahn, H. T. (2022). Long-term stability of GaAs/AlAs terahertz quantum-cascade lasers. 12(8). https://doi.org//10.1063/5.0098782
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License
CC BY 4.0 Unported