Long-term stability of GaAs/AlAs terahertz quantum-cascade lasers
dc.bibliographicCitation.firstPage | 085122 | eng |
dc.bibliographicCitation.issue | 8 | eng |
dc.bibliographicCitation.journalTitle | AIP Advances | eng |
dc.bibliographicCitation.volume | 12 | eng |
dc.contributor.author | Schrottke, L. | |
dc.contributor.author | Lü, X. | |
dc.contributor.author | Biermann, K. | |
dc.contributor.author | Gellie, P. | |
dc.contributor.author | Grahn, H.T. | |
dc.date.accessioned | 2022-11-24T06:33:08Z | |
dc.date.available | 2022-11-24T06:33:08Z | |
dc.date.issued | 2022 | |
dc.description.abstract | We have investigated high-performance GaAs/AlAs terahertz (THz) quantum-cascade lasers (QCLs) with respect to the long-term stability of their operating parameters. The output power of lasers that contain an additional, thick AlAs refractive-index contrast layer underneath the cascade structure decreases after three months by about 35%. The deterioration of these lasers is attributed to the oxidation processes in this contrast layer starting from the facets. However, GaAs/AlAs THz QCLs with an Al0.9Ga0.1As refractive-index contrast layer exhibit long-term stability of the operating parameters over many years even when they are exposed to atmospheric conditions. Therefore, these lasers are promising high-power radiation sources in the terahertz spectral region for commercial applications. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/10429 | |
dc.identifier.uri | http://dx.doi.org/10.34657/9465 | |
dc.language.iso | eng | eng |
dc.publisher | New York, NY : American Inst. of Physics | eng |
dc.relation.doi | https://doi.org/10.1063/5.0098782 | |
dc.relation.essn | 2158-3226 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | Aluminum arsenide | eng |
dc.subject.other | Deterioration | eng |
dc.subject.other | Gallium arsenide | eng |
dc.subject.other | III-V semiconductors | eng |
dc.subject.other | Quantum cascade lasers | eng |
dc.subject.other | Semiconducting gallium | eng |
dc.subject.other | Semiconductor alloys | eng |
dc.subject.other | Terahertz waves | eng |
dc.title | Long-term stability of GaAs/AlAs terahertz quantum-cascade lasers | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | PDI | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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