Influence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronics

dc.bibliographicCitation.date2024
dc.bibliographicCitation.firstPage1366
dc.bibliographicCitation.issue4
dc.bibliographicCitation.journalTitleJournal of Materials Chemistry Ceng
dc.bibliographicCitation.lastPage1376
dc.bibliographicCitation.volume12
dc.contributor.authorLapalikar, Vaidehi
dc.contributor.authorDacha, Preetam
dc.contributor.authorHambsch, Mike
dc.contributor.authorHofstetter, Yvonne J.
dc.contributor.authorVaynzof, Yana
dc.contributor.authorMannsfeld, Stefan C. B.
dc.contributor.authorRuck, Michael
dc.date.accessioned2024-04-15T06:42:05Z
dc.date.available2024-04-15T06:42:05Z
dc.date.issued2023
dc.description.abstractBismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/14534
dc.identifier.urihttps://doi.org/10.34657/13565
dc.language.isoeng
dc.publisherLondon [u.a.] : RSC
dc.relation.doihttps://doi.org/10.1039/d3tc03443g
dc.relation.essn2050-7534
dc.relation.issn2050-7526
dc.rights.licenseCC BY 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/3.0
dc.subject.ddc540
dc.subject.ddc530
dc.subject.ddc620
dc.subject.otherBismuth compoundseng
dc.subject.otherElectronic propertieseng
dc.subject.otherField effect transistorseng
dc.subject.otherHeterojunctionseng
dc.subject.otherHybrid systemseng
dc.subject.otherLead compoundseng
dc.subject.otherorganic-inorganic materialseng
dc.subject.otherPerovskiteeng
dc.subject.otherPerovskite solar cellseng
dc.subject.otherThin film circuitseng
dc.subject.otherThreshold voltageeng
dc.subject.otherBismuth oxideseng
dc.subject.otherChemical interactionseng
dc.subject.otherEnvironmentally friendly alternativeseng
dc.subject.otherHalide perovskiteseng
dc.subject.otherLow-costseng
dc.subject.otherOptoelectronic applicationseng
dc.subject.otherp-Type organic semiconductorseng
dc.subject.otherSemiconductor heterojunctionseng
dc.subject.otherSolution-processedeng
dc.subject.otherThin-filmseng
dc.subject.otherThin filmseng
dc.titleInfluence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronicseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIFWD
wgl.subjectChemieger
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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