Unraveling Structure and Device Operation of Organic Permeable Base Transistors

dc.bibliographicCitation.firstPage2000230eng
dc.bibliographicCitation.issue7eng
dc.bibliographicCitation.volume6eng
dc.contributor.authorDarbandy, Ghader
dc.contributor.authorDollinger, Felix
dc.contributor.authorFormánek, Petr
dc.contributor.authorHübner, René
dc.contributor.authorResch, Stefan
dc.contributor.authorRoemer, Christian
dc.contributor.authorFischer, Axel
dc.contributor.authorLeo, Karl
dc.contributor.authorKloes, Alexander
dc.contributor.authorKleemann, Hans
dc.date.accessioned2021-09-02T11:21:37Z
dc.date.available2021-09-02T11:21:37Z
dc.date.issued2020
dc.description.abstractOrganic permeable base transistors (OPBTs) are of great interest for flexible electronic circuits, as they offer very large on-current density and a record-high transition frequency. They rely on a vertical device architecture with current transport through native pinholes in a central base electrode. This study investigates the impact of pinhole density and pinhole diameter on the DC device performance in OPBTs based on experimental data and TCAD simulation results. A pinhole density of NPin = 54 µm−2 and pinhole diameters around LPin = 15 nm are found in the devices. Simulations show that a variation of pinhole diameter and density around these numbers has only a minor impact on the DC device characteristics. A variation of the pinhole diameter and density by up to 100% lead to a deviation of less than 4% in threshold voltage, on/off current ratio, and sub-threshold slope. Hence, the fabrication of OPBTs with reliable device characteristics is possible regardless of statistical deviations in thin film formation. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimeng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/6667
dc.identifier.urihttps://doi.org/10.34657/5714
dc.language.isoengeng
dc.publisherWeinheim : Wiley-VCHeng
dc.relation.doihttps://doi.org/10.1002/aelm.202000230
dc.relation.essn2199-160X
dc.relation.ispartofseriesAdvanced Electronic Materials 6 (2020), Nr. 7eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectorganic electronicseng
dc.subjectorganic permeable base transistorseng
dc.subjecttechnology computer-aided design simulationger
dc.subject.ddc621,3eng
dc.titleUnraveling Structure and Device Operation of Organic Permeable Base Transistorseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleAdvanced Electronic Materialseng
tib.accessRightsopenAccesseng
wgl.contributorIPFeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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