Modulation Linearity Characterization of Si Ring Modulators

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dc.bibliographicCitation.firstPage7842eng
dc.bibliographicCitation.issue24eng
dc.bibliographicCitation.journalTitleJournal of lightwave technology : LTeng
dc.bibliographicCitation.lastPage7849eng
dc.bibliographicCitation.volume39eng
dc.contributor.authorJo, Youngkwan
dc.contributor.authorMai, Christian
dc.contributor.authorLischke, Stefan
dc.contributor.authorZimmermann, Lars
dc.contributor.authorChoi, Woo-Young
dc.date.accessioned2022-03-22T09:23:12Z
dc.date.available2022-03-22T09:23:12Z
dc.date.issued2021
dc.description.abstractModulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8306
dc.identifier.urihttps://doi.org/10.34657/7344
dc.language.isoengeng
dc.publisherWashington, DC : OSAeng
dc.relation.doihttps://doi.org/10.1109/JLT.2021.3093463
dc.relation.essn1558-2213
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.ddc600eng
dc.subject.ddc620eng
dc.subject.otherLinearityeng
dc.subject.othermicrowave photonicseng
dc.subject.otherModulationeng
dc.subject.othermodulation linearityeng
dc.subject.otherNonlinear opticseng
dc.subject.otherOptical filterseng
dc.subject.otherOptical modulationeng
dc.subject.otherSi ring modulatoreng
dc.subject.otherSiliconeng
dc.subject.otherVoltage measurementeng
dc.titleModulation Linearity Characterization of Si Ring Modulatorseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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