A wideband cryogenic microwave low-noise amplifier
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Date
2020
Volume
11
Issue
Journal
Beilstein journal of nanotechnology
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Publisher
Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften
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Abstract
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. ©2020 Ivanov et al.; licensee Beilstein-Institut.License and terms: see end of document.
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Ivanov, B. I., Volkhin, D. I., Novikov, I. L., Pitsun, D. K., Moskalev, D. O., Rodionov, I. A., et al. (2020). A wideband cryogenic microwave low-noise amplifier (Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften). Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften. https://doi.org//10.3762/bjnano.11.131
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CC BY 4.0 Unported