A wideband cryogenic microwave low-noise amplifier
dc.bibliographicCitation.firstPage | 1484 | eng |
dc.bibliographicCitation.journalTitle | Beilstein journal of nanotechnology | eng |
dc.bibliographicCitation.lastPage | 1491 | eng |
dc.bibliographicCitation.volume | 11 | eng |
dc.contributor.author | Ivanov, Boris I. | |
dc.contributor.author | Volkhin, Dmitri I. | |
dc.contributor.author | Novikov, Ilya L. | |
dc.contributor.author | Pitsun, Dmitri K. | |
dc.contributor.author | Moskalev, Dmitri O. | |
dc.contributor.author | Rodionov, Ilya A. | |
dc.contributor.author | Il'ichev, Evgeni | |
dc.contributor.author | Vostretsov, Aleksey G. | |
dc.date.accessioned | 2022-03-16T12:02:21Z | |
dc.date.available | 2022-03-16T12:02:21Z | |
dc.date.issued | 2020 | |
dc.description.abstract | A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. ©2020 Ivanov et al.; licensee Beilstein-Institut.License and terms: see end of document. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/8246 | |
dc.identifier.uri | https://doi.org/10.34657/7284 | |
dc.language.iso | eng | eng |
dc.publisher | Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften | eng |
dc.relation.doi | https://doi.org/10.3762/bjnano.11.131 | |
dc.relation.essn | 2190-4286 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.ddc | 540 | eng |
dc.subject.other | HEMT amplifier | eng |
dc.subject.other | cryogenic low-noise amplifier | eng |
dc.subject.other | high-electron-mobility transistor (HEMT) | eng |
dc.subject.other | microwave cryogenic amplifier | eng |
dc.subject.other | microwave superconducting circuit readout | eng |
dc.subject.other | superconducting qubit readout | eng |
dc.title | A wideband cryogenic microwave low-noise amplifier | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IPHT | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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