Influence of diluted acid mixtures on selective etching of MHz- and kHz-fs-laser inscribed structures in YAG

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Date
2021
Volume
11
Issue
5
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Title
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Publisher
Washington, DC : OSA
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Abstract

We show that the inscription velocity of fs-laser written structures in YAG crystals can be significantly improved by the use of MHz repetition rates for the writing process. Using a 10 MHz inscription laser, record high writing velocities up to 100 mm/s are achieved. Also, the selective etching process is accelerated using a diluted mixture of 22% H3PO4 and 24% H2SO4. The diluted mixture enables selective etching of up to 9.6 mm long, 1 µm wide and 18 µm high microchannels in 23 days. The etching parameter D of 11.2 µm2/s is a factor of 3 higher than previously reported and the selectivity is even increased by an order of magnitude.

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Keywords
Mixtures, Sulfuric acid, Yttrium aluminum garnet, Acid mixtures, Etching parameters, Fs laser, Optical Society of America, Repetition rate, Selective etching
Citation
Hasse, K., Kip, D., & Kränkel, C. (2021). Influence of diluted acid mixtures on selective etching of MHz- and kHz-fs-laser inscribed structures in YAG. 11(5). https://doi.org//10.1364/OME.423931
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OSA Open Access Publishing Agreement