Electrical and mechanical properties of quenched SnO2 films on glass substrates

Abstract

SnO2 films have been prepared on glass substrates of different linear coefficients of expansion, from different tin compounds through a hydrolytic reaction by monoliquid Chemical Vapor Deposition (CVD) under simultaneous quenching. The electroconductivity of the semiconducting films was measured and found to be dependent upon the film-forming compound, the film growth rate and temperature, the hydrolytic reaction, intrinsic and thermal stress. The thermal stress is responsible for the observed differences in conductivity on glass substrates with different A values. Doping with antimony and fluor compounds led to significantly higher electroconductivities of the semiconducting SnO2 films. Bending strength measurements on SnO2-coated glass showed the existence of intrinsic stresses, both in substrate and film, which influenced the electrical properties of the film and the mechanical strength of the substrate. Contrary to conventional SnO2 film forming, followed by annealing, the bending strength of glass rises considerably if SnO2 films are applied by the CVD monoliquid method on soda—lime—silica glass. An additional strengthening effect is observed if organic tin compounds are used as film-forming agents.