Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process
dc.bibliographicCitation.articleNumber | 2207966 | |
dc.bibliographicCitation.date | 2023 | |
dc.bibliographicCitation.firstPage | 2207966 | |
dc.bibliographicCitation.issue | 8 | |
dc.bibliographicCitation.volume | 33 | |
dc.contributor.author | Tang, Tianyu | |
dc.contributor.author | Dacha, Preetam | |
dc.contributor.author | Haase, Katherina | |
dc.contributor.author | Kreß, Joshua | |
dc.contributor.author | Hänisch, Christian | |
dc.contributor.author | Perez, Jonathan | |
dc.contributor.author | Krupskaya, Yulia | |
dc.contributor.author | Tahn, Alexander | |
dc.contributor.author | Pohl, Darius | |
dc.contributor.author | Schneider, Sebastian | |
dc.contributor.author | Talnack, Felix | |
dc.contributor.author | Hambsch, Mike | |
dc.contributor.author | Reineke, Sebastian | |
dc.contributor.author | Vaynzof, Yana | |
dc.contributor.author | Mannsfeld, Stefan C. B. | |
dc.date.accessioned | 2024-04-15T06:41:56Z | |
dc.date.available | 2024-04-15T06:41:56Z | |
dc.date.issued | 2022 | |
dc.description.abstract | Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2 V−1 s−1, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2 V−1 s−1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2 V−1 s−1) and IZI-TFTs (over 38 cm2 V−1 s−1) using MO semiconductor layers annealed at 300 °C are achieved. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/14524 | |
dc.identifier.uri | https://doi.org/10.34657/13555 | |
dc.language.iso | eng | |
dc.publisher | Weinheim : Wiley-VCH | |
dc.relation.doi | https://doi.org/10.1002/adfm.202207966 | |
dc.relation.essn | 1616-3028 | |
dc.relation.ispartofseries | Advanced Functional Materials 33 (2023), Nr. 8 | |
dc.relation.issn | 1616-301X | |
dc.rights.license | CC BY-NC-ND 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0 | |
dc.subject | blade-coating | eng |
dc.subject | green solvents | eng |
dc.subject | metal oxide thin-film transistors | eng |
dc.subject | rapid annealing | eng |
dc.subject | solution processes | eng |
dc.subject.ddc | 620 | |
dc.subject.ddc | 540 | |
dc.subject.ddc | 530 | |
dc.title | Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process | eng |
dc.type | article | |
dc.type | Text | |
dcterms.bibliographicCitation.journalTitle | Advanced Functional Materials | |
tib.accessRights | openAccess | |
wgl.contributor | IFWD | |
wgl.subject | Ingenieurwissenschaften | ger |
wgl.subject | Chemie | ger |
wgl.type | Zeitschriftenartikel | ger |
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