High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

dc.bibliographicCitation.firstPageSF1004
dc.bibliographicCitation.issueSF
dc.bibliographicCitation.volume62
dc.contributor.authorChou, Ta-Shun
dc.contributor.authorSeyidov, Palvan
dc.contributor.authorBin Anooz, Saud
dc.contributor.authorGrüneberg, Raimund
dc.contributor.authorRehm, Jana
dc.contributor.authorTran, Thi Thuy Vi
dc.contributor.authorFiedler, Andreas
dc.contributor.authorTetzner, Kornelius
dc.contributor.authorGalazka, Zbigniew
dc.contributor.authorAlbrecht, Martin
dc.contributor.authorPopp, Andreas
dc.date.accessioned2023-06-02T15:03:42Z
dc.date.available2023-06-02T15:03:42Z
dc.date.issued2023
dc.description.abstractIn this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing μm level films. The density of the parasitic particles is found to be pronounced at film thicknesses starting from >1.5 to 2 μm. These particles seem to induce structural defects such as twin lamellae, thereby harming the electrical properties of the grown film. The origin of the parasitic particle is attributed to the parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, which can be largely reduced by increasing the total gas flow and decreasing the showerhead distance to the susceptor. A film thickness of up to 4 μm has been achieved after minimizing the density of parasitic particles. Thereby, RT Hall measurements reveal carrier mobilities of 160 cm2V−1s−1 at carrier concentrations of 5.7 × 1016cm−3eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/12323
dc.identifier.urihttp://dx.doi.org/10.34657/11355
dc.language.isoeng
dc.publisherBristol : IOP Publ.
dc.relation.doihttps://doi.org/10.35848/1347-4065/acb360
dc.relation.essn1347-4065
dc.relation.ispartofseriesJapanese journal of applied physics : JJAP 62 (2023), Nr. SFeng
dc.relation.issn0021-4922
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subjectgallium oxideeng
dc.subjectMOVPEeng
dc.subjectparasitic particleeng
dc.subject.ddc530
dc.titleHigh-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppressioneng
dc.typearticle
dc.typeText
dcterms.bibliographicCitation.journalTitleJapanese journal of applied physics : JJAP
tib.accessRightsopenAccess
wgl.contributorFBH
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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