X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

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dc.bibliographicCitation.firstPage2875eng
dc.bibliographicCitation.issue7eng
dc.bibliographicCitation.volume11eng
dc.contributor.authorHrauda, N.
dc.contributor.authorZhang, J.
dc.contributor.authorWintersberger, E.
dc.contributor.authorEtzelstorfer, T.
dc.contributor.authorMandl, B.
dc.contributor.authorStangl, J.
dc.contributor.authorCarbone, D.
dc.contributor.authorHolý, V.
dc.contributor.authorJovanović, V.
dc.contributor.authorBiasotto, C.
dc.contributor.authorNanver, L.K.
dc.contributor.authorMoers, J.
dc.contributor.authorGrützmacher, D.
dc.contributor.authorBauer, G.
dc.date.accessioned2020-11-12T07:22:16Z
dc.date.available2020-11-12T07:22:16Z
dc.date.issued2011
dc.description.abstractFor advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/4545
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5916
dc.language.isoengeng
dc.publisherWashington, DC : American Chemical Societyeng
dc.relation.doihttps://doi.org/10.1021/nl2013289
dc.relation.ispartofseriesNano Letters 11 (2011), Nr. 7eng
dc.relation.issn1530-6984
dc.rights.licenseACS AuthorChoiceeng
dc.rights.urihttps://pubs.acs.org/page/policy/authorchoice_termsofuse.htmleng
dc.subjectfinite element simulationseng
dc.subjectordered island growtheng
dc.subjectsemiconductor nanostructureseng
dc.subjectsilicon germaniumeng
dc.subjectstructural investigationseng
dc.subjectX-ray nanodiffractioneng
dc.subjectFinite element simulationseng
dc.subjectOrdered islandseng
dc.subjectSemiconductor nanostructureseng
dc.subjectsilicon germaniumeng
dc.subjectStructural investigationeng
dc.subjectX-ray nanodiffractioneng
dc.subjectField effect transistorseng
dc.subjectGermaniumeng
dc.subjectMechanical propertieseng
dc.subjectQuantum theoryeng
dc.subjectSemiconducting siliconeng
dc.subjectSemiconducting silicon compoundseng
dc.subjectSilicon alloyseng
dc.subjectX rayseng
dc.subjectTransistorseng
dc.subjectgermaniumeng
dc.subjectquantum doteng
dc.subjectsiliconeng
dc.subjectarticleeng
dc.subjectchemistryeng
dc.subjectnanotechnologyeng
dc.subjectparticle sizeeng
dc.subjectsemiconductoreng
dc.subjectsurface propertyeng
dc.subjectX rayeng
dc.subjectGermaniumeng
dc.subjectNanotechnologyeng
dc.subjectParticle Sizeeng
dc.subjectQuantum Dotseng
dc.subjectSemiconductorseng
dc.subjectSiliconeng
dc.subjectSurface Propertieseng
dc.subjectTransistors, Electroniceng
dc.subjectX-Rayseng
dc.subject.ddc530eng
dc.titleX-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistoreng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleNano Letterseng
local.doifilter.overrideja
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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