Wafer-scale nanofabrication of telecom single-photon emitters in silicon
dc.bibliographicCitation.firstPage | 7683 | |
dc.bibliographicCitation.issue | 1 | |
dc.bibliographicCitation.journalTitle | Nature Communications | eng |
dc.bibliographicCitation.volume | 13 | |
dc.contributor.author | Hollenbach, Michael | |
dc.contributor.author | Klingner, Nico | |
dc.contributor.author | Jagtap, Nagesh S. | |
dc.contributor.author | Bischoff, Lothar | |
dc.contributor.author | Fowley, Ciarán | |
dc.contributor.author | Kentsch, Ulrich | |
dc.contributor.author | Hlawacek, Gregor | |
dc.contributor.author | Erbe, Artur | |
dc.contributor.author | Abrosimov, Nikolay V. | |
dc.contributor.author | Helm, Manfred | |
dc.contributor.author | Berencén, Yonder | |
dc.contributor.author | Astakhov, Georgy V. | |
dc.date.accessioned | 2023-02-06T10:22:47Z | |
dc.date.available | 2023-02-06T10:22:47Z | |
dc.date.issued | 2022 | |
dc.description.abstract | A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/11308 | |
dc.identifier.uri | http://dx.doi.org/10.34657/10344 | |
dc.language.iso | eng | |
dc.publisher | [London] : Nature Publishing Group UK | |
dc.relation.doi | https://doi.org/10.1038/s41467-022-35051-5 | |
dc.relation.essn | 2041-1723 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0 | |
dc.subject.ddc | 500 | |
dc.subject.other | probability | eng |
dc.subject.other | quantum mechanics | eng |
dc.subject.other | silicon | eng |
dc.subject.other | telecommunication | eng |
dc.title | Wafer-scale nanofabrication of telecom single-photon emitters in silicon | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | |
wgl.contributor | IKZ | |
wgl.subject | Physik | ger |
wgl.subject | Chemie | ger |
wgl.type | Zeitschriftenartikel | ger |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- s41467-022-35051-5.pdf
- Size:
- 4 MB
- Format:
- Adobe Portable Document Format
- Description: