"YESvGaN" - Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost; Teilvorhaben AIXTRON SE, Herzogenrath: "300 mm MOCVD Process"
Sachbericht zum Verwendungsnachweis
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Date
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Publisher
Hannover : Technische Informationsbibliothek
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Abstract
[no abstract available]
Description
Keywords
Keywords GND
Conference
01.05.2021-31.10.2024
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Report
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publishedVersion
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Creative Commons Attribution-NonDerivs 3.0 Germany
