"YESvGaN" - Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost; Teilvorhaben AIXTRON SE, Herzogenrath: "300 mm MOCVD Process"
Sachbericht zum Verwendungsnachweis
| dc.contributor.author | Beer, Sebastian | |
| dc.contributor.author | Hahn, Herwig Utz | |
| dc.contributor.author | Anders, Thorsten | |
| dc.contributor.author | Heuken, Michael | |
| dc.date.accessioned | 2026-05-18T08:59:37Z | |
| dc.date.available | 2026-05-18T08:59:37Z | |
| dc.date.issued | 2025 | |
| dc.description.abstract | [no abstract available] | ger |
| dc.description.version | publishedVersion | |
| dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/36761 | |
| dc.identifier.uri | https://doi.org/10.34657/35829 | |
| dc.language.iso | ger | |
| dc.publisher | Hannover : Technische Informationsbibliothek | |
| dc.relation.affiliation | AIXTRON SE | |
| dc.rights.license | Creative Commons Attribution-NonDerivs 3.0 Germany | |
| dc.subject.ddc | 000 | Informatik, Information und Wissen, allgemeine Werke | |
| dc.title | "YESvGaN" - Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost; Teilvorhaben AIXTRON SE, Herzogenrath: "300 mm MOCVD Process" | ger |
| dc.title.subtitle | Sachbericht zum Verwendungsnachweis | |
| dc.type | Report | |
| dcterms.event.date | 01.05.2021-31.10.2024 | |
| dcterms.extent | 24 Seiten | |
| dtf.funding.funder | BMFTR | |
| dtf.funding.program | 16MEE0178 | |
| dtf.funding.verbundnummer | 01233465 | |
| tib.accessRights | openAccess |
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