Magneto infra-red absorption in high electronic density GaAs quantum wells

Loading...
Thumbnail Image

Date

Volume

Issue

Journal

Physical Review Letters

Series Titel

Book Title

Publisher

Cambridge : arXiv

Link to publishers version

Abstract

Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.

Description

Keywords

Collections

License

This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.
Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.