Magneto infra-red absorption in high electronic density GaAs quantum wells

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dc.bibliographicCitation.journalTitlePhysical Review Letterseng
dc.contributor.authorPoulter, A.J.L.
dc.contributor.authorZeman, J.
dc.contributor.authorMaude, D.K.
dc.contributor.authorPotemski, M.
dc.contributor.authorMartinez, G.
dc.contributor.authorRiedel, A.
dc.contributor.authorHey, R.
dc.contributor.authorFriedland, K.J.
dc.date.available2019-06-28T12:38:09Z
dc.date.issued2001
dc.description.abstractMagneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3927
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/cond-mat/0012008
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc530eng
dc.titleMagneto infra-red absorption in high electronic density GaAs quantum wellseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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