2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

dc.bibliographicCitation.volume6
dc.contributor.authorChiatti, Olivio
dc.contributor.authorRiha, Christian
dc.contributor.authorLawrenz, Dominic
dc.contributor.authorBusch, Marco
dc.contributor.authorDusari, Srujana
dc.contributor.authorSánchez-Barriga, Jaime
dc.contributor.authorMogilatenko, Anna
dc.contributor.authorYashina, Lada V.
dc.contributor.authorValencia, Sergio
dc.contributor.authorÜnal, Akin A.
dc.contributor.authorRader, Oliver
dc.contributor.authorFischer, Saskia F.
dc.date.accessioned2018-02-13T21:58:42Z
dc.date.available2019-06-28T12:38:21Z
dc.date.issued2016
dc.description.abstractLow-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1423
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3984
dc.language.isoengeng
dc.publisherLondon : Nature Publishing Groupeng
dc.relation.doihttps://doi.org/10.1038/srep27483
dc.relation.ispartofseriesScientific Reports, Volume 6eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectElectronic properties and materialseng
dc.subjectTopological insulatorseng
dc.subjectbehavioreng
dc.subjectcrystal structureeng
dc.subjectmodeleng
dc.subjectoscillationeng
dc.subjectroentgen spectroscopyeng
dc.subjectstoichiometryeng
dc.subjecttransmission electron microscopyeng
dc.subject.ddc530eng
dc.title2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakeseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleScientific Reportseng
tib.accessRightsopenAccesseng
wgl.contributorFBHeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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