Mathematical modeling of semiconductors: From quantum mechanics to devices
dc.bibliographicCitation.seriesTitle | WIAS Preprints | eng |
dc.bibliographicCitation.volume | 2575 | |
dc.contributor.author | Kantner, Markus | |
dc.contributor.author | Mielke, Alexander | |
dc.contributor.author | Mittnenzweig, Markus | |
dc.contributor.author | Rotundo, Nella | |
dc.date.accessioned | 2022-06-23T09:38:49Z | |
dc.date.available | 2022-06-23T09:38:49Z | |
dc.date.issued | 2019 | |
dc.description.abstract | We discuss recent progress in the mathematical modeling of semiconductor devices. The central result of this paper is a combined quantum-classical model that self-consistently couples van Roosbroeck's drift-diffusion system for classical charge transport with a Lindblad-type quantum master equation. The coupling is shown to obey fundamental principles of non-equilibrium thermodynamics. The appealing thermodynamic properties are shown to arise from the underlying mathematical structure of a damped Hamitlonian system, which is an isothermal version of so-called GENERIC systems. The evolution is governed by a Hamiltonian part and a gradient part involving a Poisson operator and an Onsager operator as geoemtric structures, respectively. Both parts are driven by the conjugate forces given in terms of the derivatives of a suitable free energy. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/9149 | |
dc.identifier.uri | https://doi.org/10.34657/8187 | |
dc.language.iso | eng | |
dc.publisher | Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik | |
dc.relation.doi | https://doi.org/10.20347/WIAS.PREPRINT.2575 | |
dc.relation.hasversion | https://doi.org/10.1007/978-3-030-33116-0 | |
dc.relation.issn | 2198-5855 | |
dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
dc.subject.ddc | 510 | |
dc.subject.other | Semiconductor modeling | eng |
dc.subject.other | drift-diffusion system | eng |
dc.subject.other | open quantum system, | eng |
dc.subject.other | Lindblad operator | eng |
dc.subject.other | reaction-diffusion systems | eng |
dc.subject.other | detailed balance condition | eng |
dc.subject.other | gradient structure | eng |
dc.subject.other | thermodynamically consistent coupling | eng |
dc.title | Mathematical modeling of semiconductors: From quantum mechanics to devices | eng |
dc.type | Report | eng |
dc.type | Text | eng |
dcterms.extent | 22 S. | |
tib.accessRights | openAccess | |
wgl.contributor | WIAS | |
wgl.subject | Mathematik | |
wgl.type | Report / Forschungsbericht / Arbeitspapier |
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